SCHOTTKY RECTIFIER. STPS2030CG Datasheet

STPS2030CG RECTIFIER. Datasheet pdf. Equivalent

STPS2030CG Datasheet
Recommendation STPS2030CG Datasheet
Part STPS2030CG
Description LOW DROP POWER SCHOTTKY RECTIFIER
Feature STPS2030CG; ® STPS2030CT/CG/CR LOW DROP POWER SCHOTTKY RECTIFIER www.datasheet4u.com MAJOR PRODUCTS CHARACTER.
Manufacture STMicroelectronics
Datasheet
Download STPS2030CG Datasheet





STMicroelectronics STPS2030CG
®
www.datasheet4u.com
STPS2030CT/CG/CR
LOW DROP POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
VF (max)
2 x 10 A
30 V
150°C
0.40 V
A1
K
A2
K
FEATURES AND BENEFITS
s VERY SMALL CONDUCTION LOSSES
s NEGLIGIBLE SWITCHING LOSSES
s EXTREMELY FAST SWITCHING
s LOW FORWARD VOLTAGE DROP FOR
HIGHER EFFICIENCY
s LOW THERMAL RESISTANCE
s AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual Schottky rectifier suited for switch Mode
Power Supply and high frequency DC to DC
converters.
Packaged in TO-220AB, D2PAK and I2PAK, this
device is intended for use in low voltage high
frequency inverters, free wheeling and polarity
protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
A2
A1
D2PAK
STPS2030CG
A2
K
A1
TO-220AB
STPS2030CT
A2
K
A1
I2PAK
STPS2030CR
Symbol
Parameter
Value
VRRM
IF(RMS)
IF(AV)
IFSM
IRRM
IRSM
PARM
Tstg
Tj
dV/dt
Repetitive peak reverse voltage
RMS forward current
Average forward
current
Tc = 140°C Per diode
δ = 0.5
Per device
Surge non repetitive forward current
tp = 10 ms Sinusoidal
Peak repetitive reverse current
tp=2 µs square F=1kHz
Non repetitive peak reverse current
tp = 100 µs square
Repetitive peak avalanche power
tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage (rated VR, Tj = 25°C)
30
30
10
20
180
1
2
3000
- 65 to + 150
150
10000
* : dPtot <
1 thermal runaway condition for a diode on its own heatsink
dTj Rth( j a)
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
July 2003 - Ed: 3A
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STMicroelectronics STPS2030CG
STPS2030CT/CG/CR
www.datasheet4uT.cHomERMAL RESISTANCES
Symbol
Parameter
Rth(j-c) Junction to case TO-220AB - D2PAK - I2PAK
Rth(c)
Per diode
Total
Coupling
Value
2.2
1.3
0.3
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
IR *
VF *
Parameter
Reverse leakage
current
Forward voltage drop
Pulse test : * tp = 380 µs, δ < 2%
Tests Conditions
Tj = 25°C
Tj = 125°C
VR = VRRM
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 10 A
IF = 10 A
IF = 20 A
IF = 20 A
To evaluate the conduction losses use the following equation :
P = 0.28 x IF(AV) + 0.012 IF2(RMS)
Min.
Typ.
0.15
80
0.44
0.34
0.50
0.44
Max.
1.0
160
0.50
0.40
0.58
0.52
Unit
mA
V
Fig. 1: Conduction losses versus average current.
Fig. 2: Average forward current versus ambient
temperature(δ = 0.5).
PF(AV)(W)
6
5 δ = 0.05
δ = 0.1 δ = 0.2
δ = 0.5
IF(AV)(A)
11
10
9
Rth(j-a)=Rth(j-c)
8
4
δ=1
7
6
3
5 Rth(j-a)=50°C/W
24
T 3T
12
0
IF(AV)(A)
δ=tp/T
tp
1
δ=tp/T
tp
0
Tamb(°C)
0 1 2 3 4 5 6 7 8 9 10 11 12 13
0 25 50 75 100 125 150
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1 10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
Tj(°C)
0
100 1000
0 25 50 75 100 125 150
2/6



STMicroelectronics STPS2030CG
STPS2030CT/CG/CR
Fig. 5: Non repetitive surge peak forward
current versus overload duration (maximum
values).
www.datasheeItM4u(A.c)om
175
150
125
100
75
50
IM
25
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
Ta=25°C
Ta=75°C
Ta=125°C
1.E+00
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4 δ = 0.2
0.3 δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
tp(s)
T
δ=tp/T
1.E-01
tp
1.E+00
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
IR(mA)
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
0
5
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
C(nF)
10.0
1.0
VR(V)
0.1
10 15 20 25 30
1
F=1MHz
VOSC=30mVRMS
Tj=25°C
VR(V)
10
100
Fig. 9: Forward voltage drop versus forward
current.
IFM(A)
100
Tj=125°C
(maximum values)
Tj=125°C
(typical values)
10
Tj=25°C
(maximum values)
VFM(V)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (epoxy printed
board FR4, Cu = 35µm).
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
S(Cu)(cm²)
0
0 5 10 15 20 25 30 35 40
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