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DB-85015-940
RF power amplifier using 1 x PD85015-E N-channel enhancement-mode lateral MOSFETs
Description
DB-85015-940 www.datasheet4u.com RF power amplifier using 1 x PD85015-E N-channel enhancement-mode lateral MOSFETs Features ■ ■ ■ ■ ■ ■ ■ ■ Excellent thermal stability Frequency: 860 - 940 MHz Supply voltage: 13.6 V Output power: 10 W Power gain: 15.7 ± 0.4 dB Efficiency: 60% - 62% Load mismatch: 20:1 BeO free amplifier Description The DB-85015-940 is a ...
ST Microelectronics
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DB-85015-940
RF power amplifier using 1 x PD85015-E N-channel enhancement-mode lateral MOSFETs
- ST Microelectronics
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