Freescale Semiconductor Technical Data
Document Number: MRF5S19150H Rev. 2, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. www.datasheet4u.com Typical 2 - Carri...
