Power MOSFET. IRF8721PBF Datasheet

IRF8721PBF MOSFET. Datasheet pdf. Equivalent

Part IRF8721PBF
Description Power MOSFET
Feature www.DataSheet4U.com PD - 97119 IRF8721PbF Applications l Control MOSFET of Sync-Buck Converters us.
Manufacture International Rectifier
Datasheet
Download IRF8721PBF Datasheet



IRF8721PBF
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PD - 97119
IRF8721PbF
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook Processor
Power
HEXFET® Power MOSFET
VDSS RDS(on) max
Qg
30V 8.5m:@VGS = 10V 8.3nC
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
Benefits
l Very Low Gate Charge
l Low RDS(on) at 4.5V VGS
l Low Gate Impedance
l Fully Characterized Avalanche Voltage
S1
S2
S3
G4
AA
8D
7D
6D
5D
and Current
l 20V VGS Max. Gate Rating
l Lead-Free
Description
Top View
SO-8
The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency
DC-DC converters that power the latest generation of processors for Notebook and Netcom
applications.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
30
± 20
14
11
110
2.5
1.6
V
A
W
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.02
-55 to + 150
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes  through … are on page 9
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
07/30/07



IRF8721PBF
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IRF8721PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.021
6.9
10.6
–––
-6.2
–––
–––
–––
–––
–––
8.3
2.0
1.0
3.2
2.0
4.2
5.0
1.8
–––
–––
8.5
12.5
2.35
–––
1.0
150
100
-100
–––
12
–––
–––
–––
–––
–––
–––
3.0
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
emΩ VGS = 10V, ID = 14A
eVGS = 4.5V, ID = 11A
V VDS = VGS, ID = 25μA
mV/°C
μA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 11A
VDS = 15V
nC VGS = 4.5V
ID = 11A
See Fig. 16a and 16b
nC VDS = 16V, VGS = 0V
Ω
td(on)
Turn-On Delay Time
––– 8.2 –––
VDD = 15V, VGS = 4.5V
tr Rise Time
––– 11 –––
ID = 11A
td(off)
Turn-Off Delay Time
––– 8.1 ––– ns RG = 1.8Ω
tf Fall Time
––– 7.0 –––
See Fig. 15a
Ciss Input Capacitance
––– 1040 –––
VGS = 0V
Coss Output Capacitance
––– 229 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 114 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
68
11
Units
mJ
A
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 3.1
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– ––– 112
––– ––– 1.0
––– 14 21
––– 15 23
A showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 11A, VGS = 0V
ns TJ = 25°C, IF = 11A, VDD = 15V
enC di/dt = 300A/μs
ton Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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