Power MOSFET. IRF8513PBF Datasheet

IRF8513PBF MOSFET. Datasheet pdf. Equivalent

Part IRF8513PBF
Description Power MOSFET
Feature PD - 96196 www.DataSheet4U.com IRF8513PbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for.
Manufacture International Rectifier
Total Page 11 Pages
Datasheet
Download IRF8513PBF Datasheet



IRF8513PBF
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PD - 96196
IRF8513PbF
Applications
l Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
HEXFET® Power MOSFET
VDSS
RDS(on) max
::30V
Q1 15.5m
Q2 12.7m
@VGS = 10V
@VGS = 10V
ID
8.0A
11A
Benefits
l Low Gate Charge and Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% Tested for RG
l Lead-Free (Qualified to 260°C Reflow)
l RoHS Compliant (Halogen Free)
B
T! 
T! 
B! 
9
 T ÃÃ9!
 T ÃÃ9!
 T ÃÃ9!
SO-8
Description
The IRF8513PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard
SO-8 package. The IRF8513PbF has been optimized for parameters that are critical in synchronous buck operation
including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make
this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook
and Netcom applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Q1 Max.
8.0
6.2
64
1.5
1.05
0.01
30
± 20
Q2 Max.
11
9.0
88
2.4
1.68
0.02
-55 to + 175
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Q1 Max.
42
100
Q2 Max.
42
62.5
Units
°C/W
Notes  through … are on page 11
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
www.irf.com
1
11/05/08



IRF8513PBF
IRF8513PbF
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Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
∆ΒVDSS/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)/TJ
IDSS
IGSS
gfs
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
cIAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
cISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton
2
Forward Trun-On Time
Q1&Q2
Q1
Q2
Q1
Q2
Q1&Q2
Q1
Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min.
30
–––
–––
–––
–––
–––
–––
1.35
–––
–––
–––
–––
–––
–––
19
24
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.021
0.021
12.5
18.1
10.2
14.2
1.8
-6.5
-6.9
–––
–––
–––
–––
–––
–––
5.7
7.6
1.2
1.7
0.68
1.0
2.2
3.1
1.6
1.9
2.9
4.0
3.9
5.2
2.1
1.4
8.0
8.9
8.5
10.7
8.8
9.3
5.7
5.0
766
1024
172
238
83
116
Max.
–––
–––
–––
15.5
22.2
12.7
16.9
2.35
–––
–––
1.0
150
100
-100
–––
–––
8.6
11.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.2
3.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
eVGS = 10V, ID = 8.0A
eem
VGS = 4.5V, ID = 6.4A
VGS = 10V, ID = 11A
eVGS = 4.5V, ID = 8.6A
V Q1: VDS = VGS, ID = 25µA
mV/°C Q2: VDS = VGS, ID = 25µA
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S
VDS = 15V, ID = 6.4A
VDS = 15V, ID = 8.6A
Q1
VDS = 15V
VGS = 4.5V, ID = 6.4A
nC Q2
VDS = 15V
VGS = 4.5V, ID = 8.6A
See Fig. 31a &31b
nC VDS = 16V, VGS = 0V
Q1
VDD = 15V, VGS = 4.5V
ID = 6.4A
ns
RG = 1.8See Fig.30a & 30b
Q2
VDD = 15V, VGS = 4.5V
ID = 8.6A
RG = 1.8W
VGS = 0V
pF
VDS = 15V
ƒ = 1.0MHz
Typ.
–––
–––
Q1 Max.
49
6.4
Q2 Max.
70
8.6
Units
mJ
A
Min. Typ. Max. Units
Conditions
Q1
Q2
––– ––– 1.9
––– ––– 3.0
A
MOSFET symbol
showing the
Q1 ––– ––– 64
Q2 ––– ––– 88
A
integral reverse
p-n junction diode.
eQ1
eQ2
––– ––– 1.0
––– ––– 1.0
V
TJ = 25°C, IS = 6.4A, VGS = 0V
TJ = 25°C, IS = 8.6A, VGS = 0V
eQ1
Q2
––– 15
––– 17
23
26
ns
Q1 TJ = 25°C, IF = 6.4A,
VDD = 15V, di/dt = 100A/µs
eQ1
Q2
––– 7.2
––– 9.3
11
14
nC
Q2 TJ = 25°C, IF = 8.6A,
VDD = 15V, di/dt = 100A/µs
Intrinsic turn -on time is negligible (turn -on is dominated by LS+LD)
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