Power MOSFET. CSD16323Q3 Datasheet

CSD16323Q3 MOSFET. Datasheet pdf. Equivalent

Part CSD16323Q3
Description Power MOSFET
Feature N-Channel www.DataSheet4U.com CSD16323Q3 Features  Optimized for 5V gate drive  Ultra Low Qg & Q.
Manufacture Ciclon
Total Page 10 Pages
Datasheet
Download CSD16323Q3 Datasheet



CSD16323Q3
N-Channel
CICLON NexFETwww.DataSheet4U.com
Power
MOSFETs
CSD16323Q3
Features
Optimized for 5V gate drive
Ultra Low Qg & Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
G
S
S
S
D
D
D
D
S1
S2
S3
G4
D
8D
7D
6D
5D
Halogen Free
QFN 3.3mm x 3.3mm Plastic Package Top View
Maximum Values (TA = 25oC unless otherwise stated)
Symbol
VDS
Drain to Source Voltage
Parameter
VGS Gate to Source Voltage
ID Continuous Drain Current, TC = 25°C
Continuous Drain Current1
IDM Pulsed Drain Current, TA = 25°C2
PD Power Dissipation1
TJ, TSTG
Operating Junction and Storage Temperature Range
EAS Avalanche Energy, single pulse ID =50A, L = 0.1mH, RG = 25Ω
1. RθJA = 430C/W on 1in2 Cu (2 oz.) on 0.060” thick FR4 PCB.
2. See Figure 10
Product Summary
VDS
Qg
Qgd
RDS(on)
Vth
25
6.2
1.1
VGS = 3.0V
VGS = 4.5V
VGS = 8.0V
1.1
5.4
4.4
3.8
V
nC
nC
m
m
m
V
Value
25
+10 / -6
60
21
112
3.0
-55 to 150
125
Units
V
V
A
A
A
W
°C
mJ
RDS(ON) vs. VGS
Gate Charge
16 10
14
ID = 24A
9 VDS = 12.5V
8 ID = 24A
12
7
10 6
8
TC = 125ºC
5
6
TC = 25ºC
4
3
4
2
2
1
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate to Source Voltage (V)
0
0 2 4 6 8 10 12 14
Qg - Gate Charge (nC)
Ordering Information
Type
CSD16323Q3
Package
QFN 3.3 X 3.3 Plastic Package
© 2009 CICLON Semiconductor Device Corp., rev 2.2
All rights reserved.
Package Media
13 inch reel
Qty
2500
Ship
Tape and Reel
www.ciclonsemi.com



CSD16323Q3
N-Channel
CICLON NexFETwww.DataSheet4U.com
Power
MOSFETs
CSD16323Q3
Electrical Characteristics (TA = 25OC unless otherwise stated)
Symbol
Parameter
Static Characteristics
BVDSS
IDSS
IGSS
VGS(th)
Drain to Source Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
RDS(on) Drain to Source On Resistance
gfs Transconductance
Dynamic Characteristics
CISS Input Capacitance
COSS Output Capacitance
CRSS Reverse Transfer Capacitance
Rg Series Gate Resistance
Qg Gate Charge Total (4.5V)
Qgd Gate Charge Gate to Drain
Qgs Gate Charge Gate to Source
Qg(th) Gate Charge at Vth
QOSS Output Charge
td(on) Turn On Delay Time
tr Rise Time
td(off) Turn Off Delay Time
tf Fall Time
Diode Characteristics
VSD Diode Forward Voltage
Qrr Reverse Recovery Charge
trr Reverse Recovery Time
Test Conditions
VGS = 0V, ID = 250µA
VGS = 0V, VDS = 20V
VDS = 0V, VGS = 10V
VDS = VGS, ID = 250µA
VGS = 3.0V, ID = 24A
VGS = 4.5V, ID = 24A
VGS = 8.0V, ID = 24A
VDS = 12.5V, ID = 24A
VGS = 0V, VDS = 12.5V
f = 1MHz
VDS = 12.5V, ID = 24A
VDS = 12.5V, VGS = 0V
VDS = 12.5V
VGS = 4.5V ID = 24A
RG = 7.0
IS = 24A, VGS = 0V
Vdd=12.5V, IF = 24A,
di/dt = 300A/µs
Vdd=12.5V, IF = 24A,
di/dt = 300A/µs
© 2009 CICLON Semiconductor Device Corp., rev 2.2
All rights reserved.
Min Typ Max Units
25 ▬ ▬ V
▬ ▬ 1 µA
▬ ▬ 100 nA
0.9 1.1 1.4
V
5.4 6.5 m
4.4 5.5 m
3.8 4.5 m
108
S
1020 1300 pF
740 960 pF
50 65 pF
1.1
6.2 8.4 nC
1.1 nC
1.8 nC
1.0 nC
14 nC
7 ns
18 ns
22 ns
21 ns
0.85
1.0
V
21 nC
16 ns
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