planar type. MA4Z159 Datasheet

MA4Z159 type. Datasheet pdf. Equivalent

Part MA4Z159
Description Silicon epitaxial planar type
Feature Switching Diodes www.DataSheet4U.com MA4Z159 (MA4S159) Silicon epitaxial planar type Unit: mm For .
Manufacture Panasonic Semiconductor
Total Page 3 Pages
Datasheet
Download MA4Z159 Datasheet



MA4Z159
Switching Diodes
MA4Z159www.DataSheet4U.com
(MA4S159)
Silicon epitaxial planar type
For switching circuits
s Features
Small S-mini type 4-pin package
Two isolated elements contained in one package, allowing high-
density mounting
Flat lead type, resulting in improved mounting efficiency and
solderability with the high-speed mounting machine
Short reverse recovery time trr
Small terminal capacitance, Ct
2.1±0.1
1.3±0.1
4
3
12
0.3±0.05
Unit: mm
0.7±0.1
0.16+–00..016
s Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Peak reverse voltage
Average forward Single
current
Double
VR
VRM
IF(AV)
80
80
100
75
V
V
mA
1: Anode 1
2: Anode 2
EIAJ: SC-82
3: Cathode 2
4: Cathode 1
SMini4-F1 Package
Marking Symbol: M1B
Peak forward
Single
IFM
225
mA
current
Double
170
Internal Connection
Non-repetitive peak Single
forward surge current* Double
IFSM
500
375
Junction temperature
Storage temperature
Tj 150
Tstg 55 to +150
Note) *: t = 1 s
s Electrical Characteristics Ta = 25°C
mA
°C
°C
14
23
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 75 V
VF IF = 100 mA
VR IR = 100 µA
Ct VR = 0 V, f = 1 MHz
trr IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100
0.1
0.95 1.2
80
0.9 2
3
µA
V
V
pF
ns
Note) 1. Rated input/output frequency: 100 MHz
2. *: trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50
W.F.Analyzer
(SAS-8130)
Ri = 50 Note)
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100
The part number in the parenthesis shows conventional part number.
Publication date: May 2002
SKF00049AED
1



MA4Z159
MA4Z159
www.DataSheet4U.com
IF VF
103
102
Ta = 150°C
100°C
10 25°C
20°C
1
101
102
0
0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V)
IR Ta
105
VR = 75 V
104 35 V
6V
103
102
10
1
40 0 40 80 120 160 200
Ambient temperature Ta (°C)
IR VR
105
104 Ta = 150°C
103 100°C
102
25°C
10
1
0 20 40 60 80 100 120
Reverse voltage VR (V)
Ct VR
1.2
f = 1 MHz
Ta = 25°C
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120
Reverse voltage VR (V)
VF Ta
1.6
1.4
1.2
1.0
IF = 100 mA
0.8
0.6 10 mA
0.4 3 mA
0.2
0
40 0 40 80 120 160 200
Ambient temperature Ta (°C)
1 000
300
100
IF(surge) tW
Ta = 25°C
IF(surge)
tW
Non repetitive
30
10
3
1
0.3
0.1
0.1 0.3 1 3 10
Pulse width tW (ms)
30
2 SKF00049AED





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)