MOSFET ARRAYS. ALD114913 Datasheet

ALD114913 ARRAYS. Datasheet pdf. Equivalent

Part ALD114913
Description (ALD114813 / ALD114913) QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS
Feature ADVANCED LINEAR DEVICES, INC. e TM EPAD ENA ® B L E D ALD114813/ALD114913 QUAD/DUAL N-CHANNE.
Manufacture Advanced Linear Devices
Datasheet
Download ALD114913 Datasheet



ALD114913
ADVANCED
LINEAR
DEVICES, INC.
e TM
EPAD
ENA
®
B
L
E
D
ALD114813/ALD114913
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®
PRECISION MATCHED PAIR MOSFET ARRAY
VGS(th)= -1.30V
GENERAL DESCRIPTION
APPLICATIONS
ALD114813/ALD114913 are high precision monolithic quad/dual depletion mode
N-Channel MOSFETS matched at the factory using ALD’s proven EPAD CMOS
technology. These devices are intended for low voltage, small signal applica-
tions. They are excellent functional replacements for normally-closed relay appli-
cations, as they are normally on (conducting) without any power applied, but
could be turned off or modulated when system power supply is turned on. These
MOSFETS have the unique characteristics of, when the gate is grounded, oper-
ating in the resistance mode for low drain voltage levels and in the current source
mode for higher voltage levels and providing a constant drain current.
These MOSFETS are designed for exceptional device electrical characteristics
matching. As these devices are on the same monolithic chip, they also exhibit
excellent temperature tracking characteristics. They are versatile as design com-
ponents for a broad range of analog applications, and they are basic building
blocks for current sources, differential amplifier input stages, transmission gates,
and multiplexer applications. Besides matched pair electrical characteristics, each
individual MOSFET also exhibits well controlled parameters, enabling the user to
depend on tight design limits. Even units from different batches and different date
of manufacture have correspondingly well matched characteristics.
These depletion mode devices are built for minimum offset voltage and differen-
tial thermal response, and they are designed for switching and amplifying appli-
cations in single 1.5V to +/-5V systems where low input bias current, low input
capacitance and fast switching speed are desired. These devices exhibit well
controlled turn-off and sub-threshold charactersitics and therefore can be used in
designs that depend on sub-threshold characteristics.
The ALD114813/ALD114913 are suitable for use in precision applications which
require very high current gain, beta, such as current mirrors and current sources.
A sample calculation of the DC current gain at a drain current of 3mA and gate
input leakage current of 30pA = 100,000,000. It is recommended that the user, for
most applications, connect the V+ pin to the most positive voltage and the V- and
IC pins to the most negative voltage in the system. All other pins must have
voltages within these voltage limits at all times.
FEATURES
• Depletion mode (normally ON)
• Precision Gate Threshold Voltages: -1.30V +/- 0.04V
• Nominal RDS(ON) @VGS=0.0V of 1.3K
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• VGS(th) match (VOS) — 20mV
• High input impedance — 1012typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
• Functional replacement of Form B (NC) relays
• Ultra low power (nanowatt) analog and digital
circuits
• Ultra low operating voltage (<0.2V) analog and
digital circuits
• Sub-threshold biased and operated circuits
• Zero power fail safe circuits in alarm systems
• Backup battery circuits
• Power failure and fail safe detector
• Source followers and high impedance buffers
• Precision current mirrors and current sources
• Capacitives probes and sensor interfaces
• Charge detectors and charge integrators
• Differential amplifier input stage
• High side switches
• Peak detectors and level shifters
• Sample and Hold
• Current multipliers
• Discrete analog switches and multiplexers
• Discrete voltage comparators
PIN CONFIGURATIONS
ALD114813
V-
IC* 1
GN1
DN1
S12
V-
DN4
GN4
IC*
2
M1
3
4
5 V-
6 M4
7
8 V-
V-
16 IC*
M2
V+
15 GN2
14 DN2
13 V+
12 S34
M 3 11 DN3
10 GN3
V- 9 IC*
SCL, PCL PACKAGES
ALD114913
V-
IC* 1
V-
8 IC*
GN1
DN1
S12
2
3
4
M1 M2
V-
7 GN2
6 DN2
5 V-
16-Pin
SOIC
Package
16-Pin
Plastic Dip
Package
8-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
SAL, PAL PACKAGES
*IC pins are internally connected,
connect to V-
ALD114813SCL ALD114813PCL ALD114913SAL ALD114913PAL
* Contact factory for industrial temp. range or user-specified threshold voltage values
Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com



ALD114913
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
Gate-Source voltage, VGS
Power dissipation
10.6V
10.6V
500 mW
Operating temperature range SCL, PCL, SAL, PAL package
0°C to +70°C
Storage temperature range
-65°C to +150°C
Lead temperature, 10 seconds
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V V- = -5V TA = 25°C unless otherwise specified
Parameter
Gate Threshold Voltage
Offset Voltage
VGS(th)1-VGS(th)2
Offset VoltageTempco
GateThreshold Voltage Tempco
Symbol
VGS(th)
VOS
TCVOS
TCVGS(th)
On Drain Current
Forward Transconductance
IDS (ON)
GFS
ALD114813/ALD114913
Min Typ
Max
-1.34
-1.30
7
-1.26
20
5
-1.7
0.0
+1.6
12.0
3.0
1.4
Transconductance Mismatch
Output Conductance
GFS
GOS
1.8
68
Drain Source On Resistance
RDS (ON)
500
Drain Source On Resistance
RDS (ON)
1.3
Drain Source On Resistance
Tolerance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current1
RDS (ON)
RDS (ON)
BVDSX
IDS (OFF)
Gate Leakage Current1
IGSS
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
CISS
CRSS
ton
toff
10
7
0.5
10
3
2.5
0.1
10
10
60
400
4
200
1
Unit
V
mV
Test Conditions
IDS = 1µA, VDS = 0.1V
IDS = 1µA
µV/ °C
mV/ °C
VDS1 = VDS2
ID = 1µA, VDS = 0.1V
ID = 20µA, VDS = 0.1V
ID = 40µA, VDS = 0.1V
mA VGS = +8.2V, VDS = +5V
VGS = +2.7V, VDS = +5V
mmho
VGS = +2.7V
VDS = +7.7V
%
µmho
K
VGS = +2.7V
VDS = +7.7V
VDS = 0.1V
VGS = +2.7V
VDS = 0.1V
VGS = +0.0V
%
%
V IDS = 1.0µA
VGS = -2.3V
pA VGS = -2.3V, VDS =+5V
nA TA = 125°C
pA VDS = 0V, VGS = 5V
nA TA =125°C
pF
pF
ns V+ = 5V, RL= 5K
ns V+ = 5V, RL= 5K
dB f = 100KHz
Notes: 1 Consists of junction leakage currents
ALD114813/ALD114913
Advanced Linear Devices
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