DatasheetsPDF.com

BLS6G2731-120 Datasheet, Equivalent, Power Transistor.

LDMOS S-band Radar Power Transistor

LDMOS S-band Radar Power Transistor

 

 

 

Part BLS6G2731-120
Description LDMOS S-band Radar Power Transistor
Feature www.
DataSheet4U.
com BLS6G2731-120; BLS6 G2731S-120 LDMOS S-band radar power tra nsistor Rev.
01 — 14 November 2008 Pr oduct data sheet 1.
Product profile 1 .
1 General description 120 W LDMOS powe r transistor intended for radar applica tions in the 2.
7 GHz to 3.
1 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C; tp = 10 0 µs; δ = 10 %; IDq = 100 mA; in a cl ass-AB production test circuit.
Mode of operation pulsed RF f (GHz) 2.
7 to 3.
1 VDS (V) 32 PL (W) 120 Gp (dB) 13.
5 ηD (%) 48 tr (ns) 20 tf (ns) 6 CAUTION T his device is sensitive to ElectroStati c Discharge (ESD).
The .
Manufacture NXP
Datasheet
Download BLS6G2731-120 Datasheet
Part BLS6G2731-120
Description LDMOS S-band Radar Power Transistor
Feature www.
DataSheet4U.
com BLS6G2731-120; BLS6 G2731S-120 LDMOS S-band radar power tra nsistor Rev.
01 — 14 November 2008 Pr oduct data sheet 1.
Product profile 1 .
1 General description 120 W LDMOS powe r transistor intended for radar applica tions in the 2.
7 GHz to 3.
1 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C; tp = 10 0 µs; δ = 10 %; IDq = 100 mA; in a cl ass-AB production test circuit.
Mode of operation pulsed RF f (GHz) 2.
7 to 3.
1 VDS (V) 32 PL (W) 120 Gp (dB) 13.
5 ηD (%) 48 tr (ns) 20 tf (ns) 6 CAUTION T his device is sensitive to ElectroStati c Discharge (ESD).
The .
Manufacture NXP
Datasheet
Download BLS6G2731-120 Datasheet

BLS6G2731-120

BLS6G2731-120
BLS6G2731-120

BLS6G2731-120

Recommended third-party BLS6G2731-120 Datasheet

 

 

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)