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BLS6G2731-120

Part Number	BLS6G2731-120
Manufacturer	NXP
Description	LDMOS S-band Radar Power Transistor
Published	Jul 29, 2009
Detailed Description	www.DataSheet4U.com BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 Produc...
Datasheet	BLS6G2731-120 PDF File

Overview

www.
DataSheet4U.
com BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev.
01 — 14 November 2008 Product data sheet 1.
Product proﬁle 1.
1 General description 120 W LDMOS power transistor intended for radar applications in the 2.
7 GHz to 3.
1 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation pulsed RF f (GHz) 2.
7 to 3.
1 VDS (V) 32 PL (W) 120 Gp (dB) 13.
5 ηD (%) 48 tr (ns) 20 tf (ns) 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features I Typical pulsed RF perform...

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