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BLS6G2731-120 Datasheet, Equivalent, Power Transistor.LDMOS S-band Radar Power Transistor LDMOS S-band Radar Power Transistor |
| Part | BLS6G2731-120 |
|---|---|
| Description | LDMOS S-band Radar Power Transistor |
| Feature | www. DataSheet4U. com BLS6G2731-120; BLS6 G2731S-120 LDMOS S-band radar power tra nsistor Rev. 01 — 14 November 2008 Pr oduct data sheet 1. Product profile 1 . 1 General description 120 W LDMOS powe r transistor intended for radar applica tions in the 2. 7 GHz to 3. 1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 10 0 µs; δ = 10 %; IDq = 100 mA; in a cl ass-AB production test circuit. Mode of operation pulsed RF f (GHz) 2. 7 to 3. 1 VDS (V) 32 PL (W) 120 Gp (dB) 13. 5 ηD (%) 48 tr (ns) 20 tf (ns) 6 CAUTION T his device is sensitive to ElectroStati c Discharge (ESD). The . |
| Manufacture | NXP |
| Datasheet |
| Part | BLS6G2731-120 |
|---|---|
| Description | LDMOS S-band Radar Power Transistor |
| Feature | www. DataSheet4U. com BLS6G2731-120; BLS6 G2731S-120 LDMOS S-band radar power tra nsistor Rev. 01 — 14 November 2008 Pr oduct data sheet 1. Product profile 1 . 1 General description 120 W LDMOS powe r transistor intended for radar applica tions in the 2. 7 GHz to 3. 1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 10 0 µs; δ = 10 %; IDq = 100 mA; in a cl ass-AB production test circuit. Mode of operation pulsed RF f (GHz) 2. 7 to 3. 1 VDS (V) 32 PL (W) 120 Gp (dB) 13. 5 ηD (%) 48 tr (ns) 20 tf (ns) 6 CAUTION T his device is sensitive to ElectroStati c Discharge (ESD). The . |
| Manufacture | NXP |
| Datasheet |
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