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Thyristor-Diode Modules. SDT320 Datasheet

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Thyristor-Diode Modules. SDT320 Datasheet






SDT320 Modules. Datasheet pdf. Equivalent




SDT320 Modules. Datasheet pdf. Equivalent





Part

SDT320

Description

Thyristor-Diode Modules

Manufacture

Sirectifier Semiconductors

Datasheet
Download SDT320 Datasheet


Sirectifier Semiconductors SDT320

SDT320; www.DataSheet4U.com STD/SDT320 Thyristo r-Diode Modules, Diode-Thyristor Module s Dimensions in mm (1mm=0.0394") Type V RSM VDSM V STD/SDT320GK08 900 STD/SDT32 0GK12 1300 STD/SDT320GK14 1500 STD/SDT3 20GK16 1700 STD/SDT320GK18 1900 VRRM VD RM V 800 1200 1400 1600 1800 Symbol IT RMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85o C; 180o sine TVJ=45oC VR=0 TVJ=TVJM VR= 0 TVJ=45oC VR=0 TV.


Sirectifier Semiconductors SDT320

J=TVJM VR=0 TVJ=TVJM f=50Hz, tp=200us VD =2/3VDRM IG=1A diG/dt=1A/us Test Condi tions Maximum Ratings 500 320 Unit A ITSM, IFSM t=10ms (50Hz), sine t=8.3m s (60Hz), sine t=10ms(50Hz), sine t=8.3 ms(60Hz), sine t=10ms (50Hz), sine t=8. 3ms (60Hz), sine t=10ms(50Hz), sine t=8 .3ms(60Hz), sine repetitive, IT=960A 9 200 9800 8000 8600 420000 400000 320000 306000 100 A i .


Sirectifier Semiconductors SDT320

dt 2 A2s (di/dt)cr A/us non repetiti ve, IT=320A 500 1000 120 60 20 10 -40.. .+140 140 -40...+125 V/us W W V o (dv/ dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) TVJ=TV JM IT=ITAVM tp=30us tp=500us C 50/60H z, RMS _ IISOL<1mA t=1min t=1s 3000 3 600 2.5-5/22-44 12-15/106-132 320 V~ N m/lb.in. g Mounti.



Part

SDT320

Description

Thyristor-Diode Modules

Manufacture

Sirectifier Semiconductors

Datasheet
Download SDT320 Datasheet




 SDT320
www.DataSheet4U.com
STD/SDT320
Thyristor-Diode Modules, Diode-Thyristor Modules
Type
VRSM
VDSM
V
STD/SDT320GK08 900
STD/SDT320GK12 1300
STD/SDT320GK14 1500
STD/SDT320GK16 1700
STD/SDT320GK18 1900
VRRM
VDRM
V
800
1200
1400
1600
1800
Dimensions in mm (1mm=0.0394")
Symbol
Test Conditions
I , ITRMS FRMS TVJ=TVJM
I , ITAVM FAVM TC=85oC; 180o sine
TVJ=45oC
ITSM, IFSM
VR=0
TVJ=TVJM
VR=0
TVJ=45oC
i2dt
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
(di/dt)cr
TVJ=TVJM
f=50Hz, tp=200us
VD=2/3VDRM
IG=1A
diG/dt=1A/us
repetitive, IT=960A
non repetitive, IT=320A
(dv/dt)cr
TVJ=TVJM;
VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
PGM
TVJ=TVJM
IT=ITAVM
tp=30us
tp=500us
PGAV
VRGM
TVJ
TVJM
Tstg
VISOL
50/60Hz, RMS
IISOL<_1mA
t=1min
t=1s
Md
Mounting torque (M5)
Terminal connection torque (M8)
Weight Typical including screws
Maximum Ratings
500
320
9200
9800
8000
8600
420000
400000
320000
306000
100
500
1000
120
60
20
10
-40...+140
140
-40...+125
3000
3600
2.5-5/22-44
12-15/106-132
320
Unit
A
A
A2s
A/us
V/us
W
W
V
oC
V~
Nm/lb.in.
g





 SDT320
www.DataSheet4U.com
STD/SDT320
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol
Test Conditions
IRRM
IDRM
VT, VF
VTO
rT
VGT
IGT
VGD
IGD
IL
IH
tgd
tq
QS
IRM
RthJC
RthJK
dS
dA
a
TVJ=TVJM; VR=VRRM; VD=VDRM
IT, IF=600A; TVJ=25oC
For power-loss calculations only (TVJ=140oC)
VD=6V;
VD=6V;
TVJ=TVJM;
TVJ=25oC
TVJ=-40oC
TVJ=25oC
TVJ=-40oC
VD=2/3VDRM
TVJ=25oC; tp=30us; VD=6V
IG=0.45A; diG/dt=0.45A/us
TVJ=25oC; VD=6V; RGK=
TVJ=25oC; VD=1/2VDRM
IG=1A; diG/dt=1A/us
TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=50V/us; VD=2/3VDRM
TVJ=125oC; IT, IF=400A; -di/dt=50A/us
per thyristor/diode; DC current
per module
per thyristor/diode; DC current
per module
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
Characteristic Values
70
40
1.32
0.8
0.82
2
3
150
200
0.25
10
Unit
mA
mA
V
V
m
V
mA
V
mA
200 mA
150 mA
2 us
typ. 200 us
760
275
0.112
0.056
0.152
0.076
12.7
9.6
50
uC
A
K/W
K/W
mm
mm
m/s2
FEATURES
* International standard package
* Direct copper bonded Al2O3-ceramic
base plate
* Planar passivated chips
* Isolation voltage 3600 V~
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits





 SDT320
www.DataSheet4U.com
STD/SDT320
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 1 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 2 i2t versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 4 Gate trigger characteristics
3 x STD/SDT320
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 6 Gate trigger delay time



Recommended third-party SDT320 Datasheet






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