Schottky Rectifier. DSSK28-01AS Datasheet

DSSK28-01AS Rectifier. Datasheet pdf. Equivalent

Part DSSK28-01AS
Description Power Schottky Rectifier
Feature www.DataSheet4U.com DSSK 28-01A DSSK 28-01AS IFAV = 15 A VRRM = 100 V VF = 0.64 V Power Schottky R.
Manufacture IXYS Corporation
Datasheet
Download DSSK28-01AS Datasheet



DSSK28-01AS
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Power Schottky Rectifier
with common cathode
DSSK 28-01A
DSSK 28-01AS
IFAV = 15 A
VRRM = 100 V
VF = 0.64 V
VRSM
V
100
100
VRRM
V
100
100
Type
DSSK 28-01A
DSSK 28-01AS
A C A TO-220 AB
(A-Type)
A
C
A
C (TAB)
TO-263 AB
(AS-Type)
A
A
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Symbol
IFRMS
IFAV
IFSM
EAS
IAR
(dv/dt)cr
TVJ
TVJM
Tstg
Ptot
Md
Weight
Conditions
Maximum Ratings
TC = 155°C; rectangular, d = 0.5
TVJ = 45°C; tp = 10 ms (50 Hz), sinev
IAS = 9.5 A; L = 180 µH; TVJ = 25°C; non repetitive
VA =1.5 • VRRM typ.; f=10 kHz; repetitive
35
2x15
230
10
1
5000
A
A
A
mJ
A
V/µs
-55...+175
175
-55...+150
°C
°C
°C
TC = 25°C
mounting torque (Version A only)
105
0.4...0.6
W
Nm
typical
2g
Symbol
IR
VF
RthJC
RthCH
Conditions
TVJ = 25°C VR = VRRM
TVJ = 125°C VR = VRRM
IF = 15 A;
IF = 15 A;
IF = 30 A;
TVJ = 125°C
TVJ = 25°C
TVJ = 125 °C
(Version A only)
Characteristic Values
typ. max.
0.5 mA
5 mA
0.64 V
0.79 V
0.76 V
1.4 K/W
0.5 K/W
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
Features
• International standard package
• Very low VF
• Extremely low switching losses
• Low IRM-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Dimensions see IXYS databook 2001
IXYS reserves the right to change limits, conditions and dimensions.
© 2001 IXYS All rights reserved
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DSSK28-01AS
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DSSK 28-01A
DSSK 28-01AS
100
A
IF
10
TVJ =
175°C
150°C
125°C
25°C
10
mA TVJ=175°C
1 150°C
IR
125°C
0.1 100°C
50°C
0.01
75°C
0.001 25°C
1000
pF
CT
100
1
0.0 0.2 0.4 0.6 0.8 V 1.0
VF
Fig. 1 Maximum forward voltage
drop characteristics
40
A
35
30
IF(AV)
25
d=0.5 DC
20
15
10
5
0
0 40 80 120 160°C
TC
Fig. 4 Average forward current IF(AV)
versus case temperature TC
0.0001
0
20 40 60 80 V 100
VR
Fig. 2 Typ. value of reverse current IR
versus reverse voltage VR
30
W
25
P(AV)
20
15
d=
DC
0.5
10 0.33
0.25
0.17
5 0.08
0
0 5 10 15 20 25 30 A
IF(AV)
Fig. 5 Forward power loss
characteristics
10
0
TVJ= 25°C
20 40 60 80 V 100
VR
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
10000
A
IFSM
1000
100
10
100 1000 µs 10000
tP
1
D=0.5
K/W 0.33
ZthJC
0.25
0.17
0.08
0.1
Single Pulse
(Thermal Resistance)
0.01
0.0001
0.001
0.01
0.1
DSS 16-01A
1s
t
10
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
© 2001 IXYS All rights reserved
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