Power MOSFET. KRF7204 Datasheet

KRF7204 MOSFET. Datasheet pdf. Equivalent

Part KRF7204
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7204 IC IC Features Adavanced Process Technology Ultra Low On-Resi.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7204 Datasheet




KRF7204
SMD Type
HEXFET Power MOSFET
KRF7204
Features
Adavanced Process Technology
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous Drain Current, VGS @ 10V @ TA = 25
ID
Continuous Drain Current, VGS @ 10V @ TA = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
@TC = 25
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Peak Diode Recovery dv/dt *2
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD -5.3A, di/dt 90A/ s, VDD V(BR)DSS,TJ 150
*3 Surface mounted on FR-4 board, t 10sec.
Rating
-5.3
-4.2
-21
2.5
0.02
12
-1.7
-55 to + 150
50
Unit
A
W/
V
V/nS
W
/W
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KRF7204
SMD Type
ICIC
KRF7204
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Symbol
Testconditons
V(BR)DSS VGS = 0V, ID = -250A
V(BR)DSS/ TJ ID = -1mA,Reference to 25
RDS(on)
VGS = -10V, ID = -5.3A*1
VGS = -4.5V, ID = -2.0A*1
VGS(th)
VDS = VGS, ID = -250 A
gfs VDS = -15V, ID = -5.3A*1
IDSS
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125
IGSS
VGS = -12V
VGS = 12V
Qg ID = -5.3A
Qgs VDS = -10V
Qgd VGS = -10V,*1
td(on)
VDD = -10V
tr ID = -1.0A
td(off)
RG = 6.0
tf RD = 10 *1
Min Typ Max Unit
-20 V
-0.022
V/
0.060
0.10
-1.0 -2.5 V
7.9 S
-2.5
-250
A
-100
100
nA
25
5.0 nC
8.0
14 30
26 60
100 150
ns
68 100
Internal Source Inductance
Internal Drain Inductance
LS
LD
2.5
nH
4.0
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V
VDS = -10V
f = 1.0MHz
860
750 pF
230
Continuous Source Current Body Diode)
Pulsed Source Current Body Diode) *2
IS
ISM
-2.5
A
-15
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
VSD
trr
Qrr
ton
*1 Pulse width 300 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited bymax
TJ = 25 , IS = -1.25A, VGS = 0V*1
-1.2 V
TJ = 25 , IF =-2.4A
85 100 ns
di/dt = 100A/ s*1
77 120
C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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