Power MOSFET. KRF7805Z Datasheet

KRF7805Z MOSFET. Datasheet pdf. Equivalent

Part KRF7805Z
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7805Z IC IC Features Absolute Maximum Ratings Ta = 25 Parameter C.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7805Z Datasheet




KRF7805Z
SMD Type
HEXFET Power MOSFET
KRF7805Z
Features
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous Drain Current, VGS @ 10V,TA = 25
ID
Continuous Drain Current, VGS @ 10V,TA = 70
ID
Pulsed Drain Current*1
IDM
Power Dissipation Ta = 25 *1
PD
Power Dissipation Ta = 70 *1
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Drain-Source Voltage
VDS
Operating Junction and Storage Temperature Range TJ,TSTG
Junction-to-Ambient
R JA
Junction-to-Drain Lead
R JL
Single Pulse Avalanche Energy*3
EAS
Avalanche Current *2
IAR
*1 Pulse width 400 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
*3 Starting TJ = 25 , L = 0.94mH,RG = 25 , IAS = 12A.
Rating
16
12
120
2.5
1.6
0.02
20
30
-55 to + 150
50
20
72
12
Unit
A
W
W
W/
V
V
/W
/W
mJ
A
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KRF7805Z
SMD Type
ICIC
KRF7805Z
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Testconditons
V(BR)DSS
VGS = 0V, ID = 250 A
V(BR)DSS/ TJ ID = 1mA,Reference to 25
RDS(on)
VGS = 10V, ID = 16A*1
VGS =4.5V, ID = 13A*1
VGS(th)
VGS(th)
VDS = VGS, ID = 250 A
gfs VDS = 15V, ID = 12A*1
IDSS
IGSS
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125
VGS = 20V
VGS = -20V
Qg
Qgs1
Qgs2
Qgd
ID = 12A,VDS = 15V,VGS = 4.5V,*1
Qgodr
Qsw
Qoss
VDS = 16V, VGS = 0V
td(on)
VDD = 15V
tr ID = 12A
td(off)
VGS=4.5V
tf Clamped Inductive Load
Ciss VGS = 0V
Coss
VDS = 15V
Crss f= 1.0MHz
Min Typ Max Unit
30 V
0.023
V/
5.5 44
m
7.0
1.35 2.25 V
-4.7 mV/
64 S
1.0
A
150
100
-100
nA
18 27
4.7
1.6
6.2 nC
5.5
7.8
10
11
10
ns
14
3.7
2080
480 pF
220
Continuous Source Current Body Diode)
Pulsed Source Current Body Diode) *2
IS
ISM
3.1
A
120
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
VSD TJ = 25 , IS = 12A, VGS = 0V*1
1.0 V
trr TJ = 25 , IF = 12A.VDD=15V
29 440 ns
Qrr di/dt = 100A/ s*1
20 30 nC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
*1 Pulse width 400 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited bymax
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