Power MOSFET. KRFR9210 Datasheet

KRFR9210 MOSFET. Datasheet pdf. Equivalent

Part KRFR9210
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRFR9210 Transistors IC Features Available in Tape & Reel Surface Mou.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRFR9210 Datasheet




KRFR9210
SMD Type
HEXFET Power MOSFET
KRFR9210
TransistIoCrs
Features
Available in Tape & Reel
Surface Mount
Fast Switching
P-Channel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous Drain Current, VGS @ -10V,Tc = 25
ID
Continuous Drain Current, VGS @ -10V,Tc = 100
ID
Pulsed Drain Current*1
IDM
Power Dissipation Tc = 25
PD
Power Dissipation (PCB Mount) Ta = 25
PD
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Gate-to-Source Voltage
VGS
Single Pulse Avalanche Energy*3
EAS
Avalanche Current *1
IAR
Repetitive Avalanche Energy *1
EAR
Peak Diode Recovery dv/dt *2
dv/dt
Operating Junction and Storage Temperature Range
TJ,TSTG
Junction-to-Case
R JC
Junction-to-Ambient
R JA
Junction-to-Ambient
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD -1.9A, di/dt 70A/ s, VDD V(BR)DSS,TJ 150
*3 VDD=-50V,Starting TJ = 25 , L = 124 mH,RG = 25 , IAS = -1.9A.
Rating
-1.9
-1.2
-7.6
25
2.5
0.2
0.02
20
300
-1.9
2.5
-5
-55 to + 150
5
50
110
Unit
A
W
W/
V
mJ
A
mJ
V/ns
/W
/W
/W
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KRFR9210
SMD Type
TransistIoCrs
KRFR9210
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Symbol
Testconditons
V(BR)DSS VGS = 0V, ID =- 250 A
V(BR)DSS/ TJ ID = -1mA,Reference to 25
RDS(on)
VGS = -10V, ID = -1.1A*1
VGS(th)
VDS = VGS, ID = -250 A
gfs VDS = -50V, ID = -1.1A*1
IDSS
VDS = -200V, VGS = 0V
VDS = -200V, VGS = 0V, TJ = 150
IGSS
VGS = 20V
VGS = -20V
Qg ID = -1.3A
Qgs VDS = -160V
Qgd VGS = -10V,*1
td(on)
VDD = -100V
tr ID = -2.3A
td(off)
RG =24
tf RD =41 *1
LD
Min Typ
-200
-0.23
-2.0
0.98
8.0
12
11
13
Max
3.0
-4.0
-100
-500
-100
100
8.9
2.1
3.9
Unit
V
V/
V
S
A
nA
nC
ns
4.5 nH
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current Body Diode)
LS
Ciss
Coss
Crss
IS
Pulsed Source Current Body Diode) *2
ISM
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
VSD
trr
Qrr
ton
*1 Pulse width 300 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited bymax
7.5 nH
VGS = 0V
VDS = -25V
f = 1.0MHz
170
54 pF
16
-1.9
A
-7.6
TJ = 25 , IS = -1.9A, VGS = 0V*1
-5.8 V
TJ = 25 , IF = -2.3A
110 220 ns
di/dt = 100A/ s*1
0.56 1.1
C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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