Power MOSFETs. FS25SM-9A Datasheet

FS25SM-9A MOSFETs. Datasheet pdf. Equivalent

Part FS25SM-9A
Description Power MOSFETs
Feature To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi El.
Manufacture Renesas
Datasheet
Download FS25SM-9A Datasheet




FS25SM-9A
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003



FS25SM-9A
FS25SM-9A
MITSUBISHI Nch POWER MOSFET
FS25SM-9A
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
15.9MAX.
f 3.2
Dimensions in mm
4.5
1.5
2
1.0
➀ ➁➂
5.45 5.45
4.4
0.6 2.8
G 10V DRIVE
G VDSS ................................................................................ 450V
G rDS (ON) (MAX) .............................................................. 0.16
G ID ......................................................................................... 25A
4
➁➃
GATE
DRAIN
SOURCE
DRAIN
TO-3P
APPLICATION
SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
PD
Tch
Tstg
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 200µH
Typical value
Conditions
Ratings
450
±30
25
75
25
200
–55 ~ +150
–55 ~ +150
4.8
Unit
V
V
A
A
A
W
°C
°C
g
Sep. 2001







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