Power MOSFET. KRF7205 Datasheet

KRF7205 MOSFET. Datasheet pdf. Equivalent

Part KRF7205
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7205(IRF7205) Features Adavanced Process Technology Ultra Low On-Res.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7205 Datasheet




KRF7205
SMD Type
HEXFET Power MOSFET
KRF7205(IRF7205)
Features
Adavanced Process Technology
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Dynamic dv/dt Rating
Fast Switching
MOSFIECT
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous Drain Current, VGS @ 10V @ TA = 25
ID
Continuous Drain Current, VGS @ 10V @ TA = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
@TC = 25
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Peak Diode Recovery dv/dt *2
dv/dt
Maximum Junction-to-Ambient *3
R JA
Junction and Storage Temperature Range
TJ, TSTG
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD -4.6A, di/dt 90A/ s, VDD V(BR)DSS,TJ 150
*3 Surface mounted on FR-4 board, t 10sec.
Rating
-4.6
-3.7
-15
2.5
0.02
20
-3
50
-55 to + 150
Unit
A
W
V
V
V/ns
/W
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KRF7205
SMD Type
MOSFIECT
KRF7205(IRF7205)
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Symbol
VDSS
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
VGS(th)
gfs
IDSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Internal Drain Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Continuous Source Current Body Diode)
LD
Ciss
Coss
Crss
trr
Qrr
ton
IS
Pulsed Source Current Body Diode) *2
ISM
Diode Forward Voltage
*1 Pulse width 300 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited bymax
VSD
Testconditons
VGS = 0V, ID = -250A
VGS = -10V, ID = -4.6A*1
VGS = -4.5V, ID = -2.0A*1
VDS = VGS, ID = -250 A
VDS = -15V, ID = -4.6A*1
VDS = -24V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 70
VGS = -20V
VGS = 20V
ID = -4.6A
VDS = -15V
VGS = -10V,*1
VDD = -15V
ID = -1.0A
RG = 6.0
RD = 10 *1
Min Typ Max Unit
-30 V
0.070
0.130
-1.0 -3.0 V
6.6 S
-1.0
A
-5.0
-100
100
nA
27 40
5.2 nC
7.5
14 30
21 60
ns
97 150
71 100
2.5
nH
4.0
VGS = 0V
870
VDS = -10V
720 pF
f = 1.0MHz
220
TJ = 25 , IF =-4.6A
70 100 ns
di/dt = 100A/ s*1
100 180 nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
-2.5
A
-15
TJ = 25 , IS = -1.25A, VGS = 0V*1
-1.2 V
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