CMOS Microcontroller. S3CC9AW Datasheet

S3CC9AW Microcontroller. Datasheet pdf. Equivalent

Part S3CC9AW
Description CMOS Microcontroller
Feature S3CI9E0X01 www.DataSheet4U.com FLASH INTERFACE DEVICE S3CI9E0X01 SPECIFICATION Version : Ver. 1.0.
Manufacture Samsung Semiconductor
Datasheet
Download S3CC9AW Datasheet




S3CC9AW
S3CI9E0X01 FLASH INTERFACE DEVICE
www.DataSheet4U.com
S3CI9E0X01 SPECIFICATION
Version : Ver. 1.0
Date : Jul. 16. 2003
Samsung Electronics Co., LTD
Semiconductor Flash Memory Product Planning & Applications
SAMSUNG ELECTRONICS
1



S3CC9AW
S3CI9E0X01 FLASH INTERFACE DEVICE
www.DaRtaSehveiest4iUo.cnomHistory
Revision
No.
0.0
Initial Draft
History
0.1 1.On page 18, BSC is moved from bufferRAM Write
Protection command register to system configuration
register and bufferRAM Write Protection command
register is removed.
2. Host Interface & NAND Flash Interface (page 3)
: 1.8V --> 1.8V / 2.5V / 3.0V
0.2 1. Package information is added.
2. Some description is updated.
3. Controller ID register default value is modified.
(Page 14)
4. Write Protection NAND Flash commands are
changed, and description are updated.(Page 23, 56)
0.3 1. Package pin configuration is changed.(page9)
2. Software algorithm of detecting NAND Flash type is
added. (page 18, 58)
- CE2Ena : 11 bit of system configuration register is
changed from ‘reserved’ to ‘CE2Ena’.
0.4 1. Minimum latency at sync. Read is changed from
2clocks to 3clocks
2. Technical notes are added
- Write Protection truth table is updated(page 58)
- Write Protection guidance is updated(page 58)
- Internal register reset case is updated(page 61)
- Pin connection guidance between Host and Eagle
(page 61)
- Asynchronous Page Read guidance (page 62)
3. DC/AC parameter is updated(page64~66)
: 1st release parameter
4. tASC parameter is removed.
tAES parameter is added
Draft
Date
Jan. 24th
2002
Jan. 25th
2002
Remark
Preliminary
Preliminary
Mar. 13th
2002
Preliminary
Apr. 15th
2002
Preliminary
Jun. 21th
2002
Preliminary
SAMSUNG ELECTRONICS
2







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