Flash Memory. K8D1716UTC Datasheet

K8D1716UTC Memory. Datasheet pdf. Equivalent

Part K8D1716UTC
Description 16M-Bit Dual Bank NOR Flash Memory
Feature www.DataSheet4U.com K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit (2M x8/1M x16) Du.
Manufacture Samsung Electronics
Datasheet
Download K8D1716UTC Datasheet




K8D1716UTC
www.DataSheet4U.com
K8D1716UTC / K8D1716UBC
FLASH MEMORY
Document Title
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
Revision History
Revision No. History
0.0 Initial Draft
0.1 Support 48TSOP1 Lead Free Package
0.2 Support 48FBGA Leaded/Lead Free Package
1.0 Specification finalized
Draft Date
July 25, 2004
Sep 16, 2004
Nov 29, 2004
Dec 16, 2004
Remark
Advance
Preliminary
Preliminary
1 Revision 1.0
December 2004



K8D1716UTC
www.DataSheet4U.com
K8D1716UTC / K8D1716UBC
FLASH MEMORY
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
FEATURES
GENERAL DESCRIPTION
Single Voltage, 2.7V to 3.6V for Read and Write operations
Organization
1,048,576 x 16 bit (Word mode)
Fast Read Access Time : 70ns
Read While Program/Erase Operation
Dual Bank architectures
Bank 1 / Bank 2 : 8Mb / 8Mb
Secode(Security Code) Block : Extra 64K Byte block
Power Consumption (typical value @5MHz)
- Read Current : 14mA
- Program/Erase Current : 15mA
- Read While Program or Read While Erase Current : 25mA
- Standby Mode/Auto Sleep Mode : 5µA
WP/ACC input pin
- Allows special protection of two outermost boot blocks at VIL,
regardless of block protect status
- Removes special protection of two outermost boot block at VIH,
the two blocks return to normal block protect status
- Program time at VHH : 9µs/word
Erase Suspend/Resume
Unlock Bypass Program
Hardware RESET Pin
Command Register Operation
Block Group Protection / Unprotection
Supports Common Flash Memory Interface
Industrial Temperature : -40°C to 85°C
Endurance : 100,000 Program/Erase Cycles Minimum
Data Retention : 10 years
Package : 48 Pin TSOP1 : 12 x 20 mm / 0.5 mm Pin pitch
48 Ball FBGA : 6 x 8.5 mm / 0.8 mm Ball pitch
The K8D1716U featuring single 3.0V power supply, is a 16Mbit
NOR-type Flash Memory organized as 2Mx8 or 1M x16. The
memory architecture of the device is designed to divide its
memory arrays into 39 blocks to be protected by the block
group. This block architecture provides highly flexible erase and
program capability. The K8D1716U NOR Flash consists of two
banks. This device is capable of reading data from one bank
while programming or erasing in the other bank. Access times
of 70ns, 80ns and 90ns are available for the device. The
devices fast access times allow high speed microprocessors to
operate without wait states. The device performs a program
operation in units of 8 bits (Byte) or 16 bits (Word) and erases in
units of a block. Single or multiple blocks can be erased. The
block erase operation is completed within typically 0.7 sec. The
device requires 15mA as program/erase current in the standard
and industrial temperature ranges.
The K8D1716U NOR Flash Memory is created by using Sam-
sung's advanced CMOS process technology. This device is
available in 48 pin TSOP1 and 48 ball FBGA package. The
device is compatible with EPROM applications to require high-
density and cost-effective nonvolatile read/write storage solu-
tions.
PIN DESCRIPTION
Pin Name
Pin Function
PIN CONFIGURATION
A0 - A19
DQ0 - DQ14
Address Inputs
Data Inputs / Outputs
A15
A14
A13
A12
A11
A10
A9
A8
A19
N.C
WE
RESET
N.C
WP/ACC
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-pin TSOP1
Standard Type
12mm x 20mm
Note :
Please refer to the package dimension.
48 A16
47 BYTE
46 Vss
45 DQ15/A-1
44 DQ7
43 DQ14
42 DQ6
41 DQ13
40 DQ5
39 DQ12
38 DQ4
37 Vcc
36 DQ11
35 DQ3
34 DQ10
33 DQ2
32 DQ9
31 DQ1
30 DQ8
29 DQ0
28 OE
27 Vss
26 CE
25 A0
DQ15/A-1
BYTE
CE
OE
RESET
RY/BY
WE
WP/ACC
Vcc
DQ15 Data Input / Output
A-1 LSB Address
Word / Byte Selection
Chip Enable
Output Enable
Hardware Reset Pin
Ready/Busy Output
Write Enable
Hardware Write Protection/Program
Acceleration
Power Supply
VSS Ground
N.C No Connection
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2 Revision 1.0
December 2004







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