Planar Transistor. ST2SC1359 Datasheet

ST2SC1359 Transistor. Datasheet pdf. Equivalent

Part ST2SC1359
Description NPN Silicon Epitaxial Planar Transistor
Feature www.DataSheet4U.com ST 2SC1359 NPN Silicon Epitaxial Planar Transistor for switching and AF amplif.
Manufacture SEMTECH ELECTRONICS
Datasheet
Download ST2SC1359 Datasheet




ST2SC1359
ST 2SC1359
www.DataSheet4U.com
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into one group,
according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Tamb = 25 OC
Parameter
DC Current Gain
at VCE=6V, IC=1mA
Collector Base Breakdown Voltage
at IC=100µA
Collector Emitter Breakdown Voltage
at IC=10mA
Emitter Base Breakdown Voltage
at IE=10µA
Collector Cutoff Current
at VCB=30V
Emitter Cutoff Current
at VEB=3V
Collector Saturation Voltage
at IC=100mA, IB=10mA
Gain Bandwidth Product
at VCE=6V, IC=10mA
Output Capacitance
at VCB=6V, f=1MHz
Noise Figure
at VCE=6V, IE=0.5mA, f=1KHz, RS=500at
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
TS
TO-92 Plastic Package
Weight approx. 0.19g
Value
30
20
5
100
250
150
-55 to +150
Unit
V
V
V
mA
mW
OC
OC
Symbol
hFE
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
fT
COB
NF
Min.
150
30
20
5
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
125
1.8
4
Max.
650
-
-
-
0.1
0.1
0.3
-
-
-
Unit
-
V
V
V
µA
µA
V
MHz
pF
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/12/2005



ST2SC1359
ST 2SC1359
www.DataSheet4U.com
Total power dissipation
vs. ambient temperature
300
Free air
250
200
150
100
50
0 25 50 75 100 125 150
Tamb ( C)
Collector current vs.
collector emitter voltage
100 1.0 0.9
0.8
0.7
80 0.6
0.5
0.4
60
0.3
40
0.2
20
I B=0.1mA
0
0 0.4 0.8 1.2 1.6 2.0
VCE, V
360
320
280
240
200
160
120
80
40
0
0.01
h FE - IC
pulsed
VCE=6.0V
3.0V
2.0V
1.0V
0.5V
0.1 1
10
COLLECTOR CURRENT, mA
100
10000
Normalized collector cutoff current
vs. ambient temperature
1000
100
10
1
0 20 40 60 80 100 120 140 160
Tamb ( C)
Collector current vs.
collector emitter voltage
10
4.5
84
3.5
3
6 2.5
2
4
1.5
1
2
IB=0.5 A
0
0 10 20 30 40 50
VCE, V
360
320
280
240
200
160
120
80
40
0
0.01
h FE - IC
Ta=75 C
VCE=6V
pulsed
25 C
-25 C
0.1 1
10
COLLECTOR CURRENT, mA
100
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/12/2005







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