Controlled Rectifiers. SCF25C60 Datasheet

SCF25C60 Rectifiers. Datasheet pdf. Equivalent

Part SCF25C60
Description Silicon Controlled Rectifiers
Feature www.DataSheet4U.com SemiWell Semiconductor SCF25C60 Symbol 3. Gate ○ ○ Silicon Controlled Rectifi.
Manufacture SemiWell Semiconductor
Datasheet
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SCF25C60
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SemiWell Semiconductor
SCF25C60
Silicon Controlled Rectifiers
Symbol
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 25 A )
Low On-State Voltage (1.3V(Typ.)@ ITM)
Isolation Voltage ( VISO = 1500V AC )
General Description
2. Anode
TO-220F
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor con-
trol circuit in power tool, inrush current limit circuit and heating
control system.
123
3. Gate
1. Cathode
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
Half Sine Wave : TC = 69 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
di/dt Critical rate of rise of on-state current
PGM
PG(AV)
IFGM
VRGM
VISO
TJ
TSTG
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
Over any 20ms period
A.C. 1 minute
Ratings
600
16
25
275
380
50
20
1
5
5.0
1500
- 40 ~ 125
- 40 ~ 150
Aug, 2003. Rev. 1
Information offers: http://www.kkg.com.cn
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
Units
V
A
A
A
A2s
A/
W
W
A
V
V
°C
°C
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SCF25C60
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SCF25C60
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Items
Conditions
Ratings
Min. Typ. Max.
Unit
IDRM
Repetitive Peak Off-State
Current
VTM Peak On-State Voltage (1)
IGT Gate Trigger Current (2)
VAK = VDRM
TC = 25 °C
TC = 125 °C
ITM = 50 A
tp=380
VAK = 6 V(DC), RL=10 Ω
TC = 25 °C
10
200
1.6 V
15 mA
VGT Gate Trigger Voltage (2)
VD = 6 V(DC), RL=10 Ω
TC = 25 °C
1.5 V
VGD Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω TC = 125 °C 0.2 ─ ─ V
dv/dt
Critical Rate of Rise Off-State Linear slope up to VD=VDRM 67%,
Voltage
Gate open
TJ = 125°C
250
V/
IH Holding Current
IT = 100mA, Gate Open
TC = 25 °C
2 20 mA
Rth(j-c)
Rth(j-a)
Thermal Impedance
Thermal Impedance
Junction to case
Junction to Ambient
Notes :
1. Pulse Width 1.0 ms , Duty cycle 1%
2. RGK Current not Included in measurement.
─ ─ 2.2 °C/W
─ ─ 60 °C/W
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