Power FET. EIC0910-25 Datasheet

EIC0910-25 FET. Datasheet pdf. Equivalent

Part EIC0910-25
Description 9.50-10.50 GHz 25-Watt Internally Matched Power FET
Feature www.DataSheet4U.com EIC0910-25 9.50-10.50 GHz 25-Watt Internally Matched Power FET 2X 0.079 MIN 4X .
Manufacture Excelics Semiconductor
Datasheet
Download EIC0910-25 Datasheet




EIC0910-25
www.DataSheet4U.com
EIC0910-25
9.50-10.50 GHz 25-Watt Internally Matched Power FET
FEATURES
9.50 – 10.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+44 dBm Output Power at 1dB Compression
7 dB Power Gain at 1dB Compression
30% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
2X 0.079 MIN
4X 0.102
0.945 0.803
Excelics
EIC0910-25
YYWW
SN
0.010
0.158
0.055
0.315
0.685
0.617
0.024
0.580
0.004
0.095
0.055
0.168
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
MIN TYP MAX
P1dB
G1dB
G
PAE
Id1dB
Output Power at 1dB Compression
f = 9.50-10.50GHz
VDS = 10 V, IDSQ 5000mA
Gain at 1dB Compression
f = 9.50-10.50GHz
VDS = 10 V, IDSQ 5000mA
Gain Flatness
f = 9.50-10.50GHz
VDS = 10 V, IDSQ 5000mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 5000mA
f = 9.50-10.50GHz
Drain Current at 1dB Compression
f = 9.50-10.50GHz
43
6
44
7
30
6800
±0.6
8300
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
11 16
VP Pinch-off Voltage
VDS = 3 V, IDS = 130 mA
-2.5 -4.0
RTH Thermal Resistance2
1.4 1.8
1. Tested with 15 Ohm gate resistor, forward and reverse gate current should not exceed 105mA and -10.5mA respectively
2. Overall Rth depends on case mounting.
UNITS
dBm
dB
dB
%
mA
A
V
oC/W
MAXIMUM RATING AT 25°C1,2
SYMBOLS
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Pin Input Power
Tch Channel Temperature
Tstg
Storage Temperature
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
ABSOLUTE1
15
-5
38.5 dBm
175 oC
-65 to +175 oC
83W
CONTINUOUS2
10V
-4V
@ 3dB Compression
175 oC
-65 to +175 oC
83W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revision. 01



EIC0910-25
www.DataSheet4U.com
EIC0910-25
9.50-10.50 GHz 25-Watt Internally Matched Power FET
freq (9.000GHz to 11.00GHz)
10
5
0
-5
-10
-15
-20
-25
9.0 9.2 9.4 9.6 9.8 10.0 10.2 10.4 10.6 10.8 11.0
freq, GHz
Frequency
GHz
9.000
9.100
9.200
9.300
9.400
9.500
9.600
9.700
9.800
9.900
10.00
S11
MAG
ANG
0.677
132.0
0.636
113.3
0.604
94.8
0.573
76.1
0.548
57.5
0.524
39.6
0.496
22.5
0.468
6.5
0.437
-8.7
0.401
-23.8
0.356
-38.8
S21
MAG
ANG
0.066
83.1
0.07
65.7
0.075
49.9
0.08
36.1
0.084
20.1
0.087
4.4
0.091
-10.8
0.095
-24.4
0.099
-40.0
0.102
-53.9
0.108
-69.1
S12
MAG
ANG
2.046
126.6
2.152
111.0
2.216
95.8
2.268
80.9
2.327
65.4
2.361
50.7
2.383
36.2
2.39
21.6
2.407
7.0
2.433
-7.2
2.45
-21.6
S22
MAG
ANG
0.35 -169.5
0.337
172.0
0.336
153.5
0.341
136.7
0.354
120.1
0.373
105.7
0.39 92.2
0.409
79.2
0.423
67.4
0.437
55.6
0.445
44.0
Typical S-Parameters (T= 25°C, 50system, de-embedded to edge of package)
VDS = 10 V, IDSQ 5000mA
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revision. 01







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)