EIC1314-8 Datasheet PDF


Part Number

EIC1314-8

Description

12.75-13.25 GHz 12-Watt Internally Matched Power FET

Manufacture

Excelics Semiconductor

Total Page 4 Pages
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Features Datasheet pdf www.DataSheet4U.com EIC1314-8 ISSUED 2/ 06/2009 13.75-14.5 GHz 8-Watt Internal ly Matched Power FET FEATURES • • • • • • 13.75– 14.5GHz Bandwi dth Input/Output Impedance Matched to 5 0 Ohms +39.0 dBm Output Power at 1dB Co mpression 6.0 dB Power Gain at 1dB Comp ression 24% Power Added Efficiency Herm etic Metal Flange Package EIC1314-8 EL ECTRICAL CHARACTERISTICS (Ta = 25°C) S YMBOL P1dB G1dB ∆G PAE IMD3 Id1dB IDS S VP RTH PARAMETERS/TEST CONDITIONS1 Ou tput Power at 1dB Compression f = 13.75 -14.5GHz VDS = 10 V, IDSQ ≈ 2400mA Ga in at 1dB Compression f = 13.75-14.5GHz VDS = 10 V, IDSQ ≈ 2400mA Gain Flatn ess f = 13.75-14.5GHz VDS = 10 V, IDSQ ≈ 2400mA Power Added Efficiency at 1dB Compression f = 13.
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EIC1314-8 Datasheet
www.DataSheet4U.com
ISSUED 2/06/2009
EIC1314-8
13.75-14.5 GHz 8-Watt Internally Matched Power FET
FEATURES
13.75– 14.5GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.0 dBm Output Power at 1dB Compression
6.0 dB Power Gain at 1dB Compression
24% Power Added Efficiency
Hermetic Metal Flange Package
EIC1314-8
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
P1dB
G1dB
G
PAE
IMD3
Id1dB
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression
f = 13.75-14.5GHz
VDS = 10 V, IDSQ 2400mA
Gain at 1dB Compression
f = 13.75-14.5GHz
VDS = 10 V, IDSQ 2400mA
Gain Flatness
f = 13.75-14.5GHz
VDS = 10 V, IDSQ 2400mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 2400mA
f = 13.75-14.5GHz
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 28.0 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 14.50 GHz
Drain Current at 1dB Compression
f = 13.75-14.5GHz
MIN
38.5
5.0
-44
TYP
39.0
6.0
24
-47
2500
MAX
±0.6
UNITS
dBm
dB
dB
%
dBc
2800
mA
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
4000
6000
mA
VP Pinch-off Voltage
VDS = 3 V, IDS = 40 mA
-2.5 -4.0
V
RTH Thermal Resistance3
3.5 4.0 oC/W
Note: 1) Tested with 15 Ohm gate resistor. 2) S.C.L. = Single Carrier Level.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Igsf Forward Gate Current
Igsr
Reverse Gate Current
Pin Input Power
Tch Channel Temperature
Tstg
Storage Temperature
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
15
-5
86.4mA
-14.4mA
37 dBm
175 oC
-65 to +175 oC
37.5W
10V
-4V
28.8mA
-4.8mA
@ 3dB Compression
175 oC
-65 to +175 oC
37.5W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised February 2009




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