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FDZ294N Datasheet, Equivalent, BGA MOSFET.

N-Channel 2.5 V Specified PowerTrench BGA MOSFET

N-Channel 2.5 V Specified PowerTrench BGA MOSFET

 

 

 

Part FDZ294N
Description N-Channel 2.5 V Specified PowerTrench BGA MOSFET
Feature www.
DataSheet4U.
com FDZ294N July 2005 FDZ294N N-Channel 2.
5 V Specified Powe rTrench® BGA MOSFET General Descriptio n Combining Fairchild’s advanced 2.
5V specified PowerTrench process with sta te of the art BGA packaging, the FDZ294 N minimizes both PCB space This BGA MOS FET embodies a and RDS(ON).
breakthroug h in packaging technology which enables the device to combine excellent therma l transfer characteristics, high curren t handling capability, ultralow profile packaging, low gate charge, and low RD S(ON).
Features
• 6 A, 20 V RDS(ON) = 23 mΩ @ VGS = 4.
5 V RDS(ON) = 34 m @ VGS = 2.
5 V
• Occu .
Manufacture Fairchild Semiconductor
Datasheet
Download FDZ294N Datasheet
Part FDZ294N
Description N-Channel 2.5 V Specified PowerTrench BGA MOSFET
Feature www.
DataSheet4U.
com FDZ294N July 2005 FDZ294N N-Channel 2.
5 V Specified Powe rTrench® BGA MOSFET General Descriptio n Combining Fairchild’s advanced 2.
5V specified PowerTrench process with sta te of the art BGA packaging, the FDZ294 N minimizes both PCB space This BGA MOS FET embodies a and RDS(ON).
breakthroug h in packaging technology which enables the device to combine excellent therma l transfer characteristics, high curren t handling capability, ultralow profile packaging, low gate charge, and low RD S(ON).
Features
• 6 A, 20 V RDS(ON) = 23 mΩ @ VGS = 4.
5 V RDS(ON) = 34 m @ VGS = 2.
5 V
• Occu .
Manufacture Fairchild Semiconductor
Datasheet
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