isc Silicon NPN Darlington Power Transistor
2SD1500
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= 10A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXI...
