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2SD1928

Power Transistor

Description

isc Silicon NPN Darlington Power Transistor 2SD1928 DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A ·High DC Current Gain : hFE= 2000(Min) @ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching industria...

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