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2SC3885

Power Transistor

Description

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage : VCBO= 1400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB...

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