Memory. AS27C256 Datasheet

AS27C256 Datasheet PDF


Part

AS27C256

Description

256K UVEPROM UV Erasable Programmable Read-Only Memory

Manufacture

Austin Semiconductor

Page 13 Pages
Datasheet
Download AS27C256 Datasheet


AS27C256 Datasheet
Austin Semiconductor, Inc.
UVEPROM
AS27C256
256K UVEPROM
UV Erasable Programmable
Read-Only Memory
AVAILABLE AS MILITARY
SPECIFICATIONS
• -55C to 125C operation
• MILITARY Processing Method MIL-PRF-38535, Class Q
• Commercial Version Available
FEATURES
• Organized 32,768 x 8
• Single +5V ±10% power supply
• Pin-compatible with existing 256K ROM’s and EPROM’s
• All inputs/outputs fully TTL compatible
• Power-saving CMOS technology
• Very high-speed FLASHRITE Pulse Programming
• 3-state output buffers
• 400-mV DC assured noise immunity with standard TTL
loads
• Latchup immunity of 250 mA on all input and output pins
• Low power dissipation (CMOS Input Levels)
-Active - 165mW Worst Case
-Standby - 1.7mW Worst Case (CMOS-input levels)
* FUTURE High Speed Offerings: 55ns, 70ns, 90ns
OPTIONS
• Timing
120ns access
150ns access
www.Data1S7h0enest4aUc.ccoemss
200ns access
250ns access
300ns access
55ns access
70ns access
90ns access
MARKING
-12
-15
-17
-20
-25
-30
-55
-70
-90
• Package(s)
Ceramic DIP (600mils) J No. 110
Ceramic LCC (450 x 550 mils) ECA No. 208
• Processing / Operating Temperature Ranges
Full Military (-55oC to +125oC) M
Industrial (-40°C to +85°C)
I
Military Temp (-55oC to +125oC) XT
PIN ASSIGNMENT
(Top View)
28-Pin DIP (J)
(600 MIL)
VPP
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 Vcc
27 A14
26 A13
25 A8
24 A9
23 A11
22 G\
21 A10
20 E\
19 DQ7
18 DQ6
17 DQ5
16 DQ4
15 DQ3
32-Pin LCC (ECA)
(450 x 550 mils)
4 3 2 1 32 31 30
AA7 6 5
AA6 5 6
AA5 4 7
AA4 3 8
AA3 2 9
AA2 1 10
AA1 0 11
AN0C 12
DDQQ1 0 13
14 15 16 17 18 19 20
29 AW8 E \
28 AA913
27 AA181
26 NAC9
25 GA\11
24 AO10E \
23 EA\ 10
22 DCQE71\
21 DDQQ68
Pin Name
Function
AP0in- NAa1m4e Address IFnupnucttsion
DQ0-DQ7 Inputs (programming)/Outputs
E\ Chip Enable/Power Down
G\ Output Enable
GND Ground
VCC 5V Supply
VPP 13V Programming Power Supply
For more products and information
please visit our web site at
www.austinsemiconductor.com
AS27C256
Rev. 2.0 7/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1

AS27C256 Datasheet
Austin Semiconductor, Inc.
UVEPROM
AS27C256
GENERAL DESCRIPTION
The AS27C256 series is a set of 262,144 bit, ultraviolet-light
erasable, electrically programmable read-only memories.
These devices are fabricated using power-saving CMOS tech-
nology for high speed and simple interface with MOS and bipo-
lar circuits. All inputs (including program data inputs) can be
driven by Series 54 TTL circuits without the use of external
pullup resistors. Each output can drive one Series 54 TTL
circuit without external resistors. The data outputs are 3-state
for connecting multiple devices to a common bus. The
AS27C256 is pin-compatible with 28-pin 256K ROMs and
EPROMs. It is offered in a 600mil dual-in-line ceramic package
(J suffix) and a 450 x 550 mil ceramic LCC (ECA suffix) rated for
operation from -55°C to 125°C.
Because this EPROM operates from a single 5V supply (in
the read mode), it is ideal for use in microprocessor-based sys-
tems. One other supply (12.75V) is needed for programming.
All programming signals are TTL level. This device is pro-
grammable by the AMD FLASHRITE Pulse programming algo-
rithm. The FLASHRITE Pulse programming algorithm uses a
VPP of 12.75VV and a VCC of 6.25V for a nominal programming
time of four seconds. For programming outside the system,
existing EPROM programmers can be used. Locations can be
programmed singly, in blocks, or at random.
www.DataSheet4U.com
FUNCTIONAL BLOCK DIAGRAM*
A0 10
A1 9
A2
A3
8
7
A4
A5
A6
A7
A8
A9
6
5
4
3
25
24
21
A10
A11
A12
A13
A14
23
2
26
27
E\ 20
G\ 22
EPROM 32,768 x 8
0
A0
32,767
14
[PWR DWN]
&
EN
A
A
A
A
A
A
A
A
11
12
13
15
16
17
18
19
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
* This symbol is in accordance with ANSI/IEEE std 91-1984 and IEC Publication 617-12.
AS27C256
Rev. 2.0 7/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2


Features Datasheet pdf UVEPROM Austin Semiconductor, Inc. 256K UVEPROM UV Erasable Programmable Read-O nly Memory AVAILABLE AS MILITARY SPECIF ICATIONS • -55C to 125C operation • MILITARY Processing Method MIL-PRF-385 35, Class Q • Commercial Version Avai lable AS27C256 PIN ASSIGNMENT (Top Vi ew) 28-Pin DIP (J) (600 MIL) VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 2 6 25 24 23 22 21 20 19 18 17 16 15 Vcc A14 A13 A8 A9 A11 G A10 E DQ7 DQ6 DQ5 D Q4 DQ3 FEATURES • • • • • • • Organized 32,768 x 8 Single + 5V ±10% power supply Pin-compatible wi th existing 256K ROM’s and EPROM’s All inputs/outputs fully TTL compatible Power-saving CMOS technology Very high -speed FLASHRITE Pulse Programming 3-st ate output buffers 400-mV DC assured no ise immunity with standard TTL loads Latchup immunity of 250 mA on all inp ut and output pins • Low power dissip ation (CMOS Input Levels) -Active - 165 mW Worst Case -Standby - 1.7mW Worst Case (CMOS-input levels) * FUTURE High Speed Offerings: 5.
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