Memory. AS29LV016 Datasheet

AS29LV016 Datasheet PDF


Part

AS29LV016

Description

16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory

Manufacture

Austin Semiconductor

Page 30 Pages
Datasheet
Download AS29LV016 Datasheet


AS29LV016 Datasheet
COTS PEM
BOOT SECTOR FLASH
Austin Semiconductor, Inc.
AS29LV016
16 Megabit (2M x 8-Bit / 1M x 16-Bit)
CMOS 3.0 Volt-Only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
„ Commercial Off The Shelf, up-screened device
„ Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
„ Manufactured on 200nm process technology
„ Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
thirty-one 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
thirty-one 32 Kword sectors (word mode)
„ Sector Protection features
— A hardware method of locking a sector to prevent
any program or erase operations within that
sector
— Sectors can be locked in-system or via
programming equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
„ Unlock Bypass Program Command
— Reduces overall programming time when issuing
www.DataSheemt4uUl.tcipomle program command sequences
„ Top or bottom boot block configurations
available
„ Compatibility with JEDEC standards
— Pinout and software compatible with single-power
supply Flash
— Superior inadvertent write protection
PERFORMANCE CHARACTERISTICS
„ High performance
— Access times as fast as 70 ns @ Enhanced
Temp [/ET]
— Extended temp range available [/XT] (-55°C to
+125°C)
„ Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 9 mA read current
— 20 mA program/erase current
„ Cycling endurance: 1,000,000 cycles per sector
typical
„ Data retention: 20 years typical
SOFTWARE FEATURES
„ CFI (Common Flash Interface) compliant
— Provides device-specific information to the
system, allowing host software to easily
reconfigure for different Flash devices
„ Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
„ Data# Polling and toggle bits
— Provides a software method of detecting program
or erase operation completion
PACKAGE OPTIONS
„ 48-pin TSOP1
HARDWARE FEATURES
„ Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program
or erase cycle completion
„ Hardware reset pin (RESET#)
AS29LV016
Rev. 2.1 10/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1

AS29LV016 Datasheet
COTS PEM
BOOT SECTOR FLASH
Austin Semiconductor, Inc.
AS29LV016
GENERAL DESCRIPTION
The AS29LV016 is a 16 Mbit, 3.0 Volt-only Flash
memory organized as 2,097,152 bytes or
1,048,576 words. The word-wide data (x16)
appears on DQ15–DQ0; the byte-wide (x8) data
appears on DQ7–DQ0. This device is designed to
be programmed in-system with the standard
system 3.0 volt VCC supply. A 12.0 V VPP or 5.0
VCC are not required for write or erase operations.
The device can also be programmed in standard
EPROM programmers.
The device offers access times of 70 ns, 90 ns
and 100 ns allowing high speed microprocessors
to operate without wait states. To eliminate bus
contention the device has separate chip enable
(CE#), write enable (WE#) and output enable
(OE#) controls.
The device requires only a single 3.0 volt power
supply for both read and write functions. Internally
generated and regulated voltages are provided
for the program and erase operations.
The AS29LV016 is entirely command set
compatible with the JEDEC single-power-supply
Flash standard. Commands are written to the
command register using standard microprocessor
write timings. Register contents serve as input
to an internal state-machine that controls the
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the programming and erase operations. Reading
data out of the device is similar to reading from
other Flash or EPROM devices.
Device programming occurs by executing the
program command sequence. This initiates the
Embedded Program algorithm—an internal
algorithm that automatically times the program
pulse widths and verifies proper cell margin. The
Unlock Bypass mode facilitates faster programming
times by requiring only two write cycles to program
data instead of four.
Device erasure occurs by executing the erase
command sequence. This initiates the Embedded
Erase algorithm—an internal algorithm that
automatically preprograms the array (if it is not
already programmed) before executing the erase
operation. During erase, the device automatically
times the erase pulse widths and verifies proper
cell margin.
The host system can detect whether a program
or erase operation is complete by observing the
RY/BY# pin, or by reading the DQ7 (Data# Polling)
and DQ6 (toggle) status bits. After a program or
erase cycle has been completed, the device is
ready to read array data or accept another
command.
The sector erase architecture allows memory
sectors to be erased and reprogrammed without
affecting the data contents of other sectors. The
device is fully erased when shipped from the
factory.
Hardware data protection measures include a low
VCC detector that automatically inhibits write
operations during power transitions. The hardware
sector protection feature disables both program
and erase operations in any combination of the
sectors of memory. This can be achieved in-system
or via programming equipment.
The Erase Suspend/Erase Resume feature enables
the user to put erase on hold for any period of
time to read data from, or program data to, any
sector that is not selected for erasure. True
background erase can thus be achieved.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine
to reading array data. The RESET# pin may be
tied to the system reset circuitry. A system reset
would thus also reset the device, enabling the
system microprocessor to read the boot-up
firmware from the Flash memory.
The device offers two power-saving features.
When addresses have been stable for a specified
amount of time, the device enters the automatic
sleep mode. The system can also place the device
into the standby mode. Power consumption is
greatly reduced in both these modes.
AS29LV016
Rev. 2.1 10/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2


Features Datasheet pdf CO TS PEM COTS BOO T SECT OR FLASH BOOT SECTOR Austin Semiconductor, Inc. AS29L V016 16 Megabit (2M x 8-Bit / 1M x 16- Bit) CMOS 3.0 Volt-Only Boot Sector Fla sh Memory DISTINCTIVE CHARACTERISTICS „ PERFORMANCE CHARACTERISTICS „ C ommercial Off The Shelf, up-screened de vice Single power supply operation — Full voltage range: 2.7 to 3.6 volt rea d and write operations for battery-powe red applications Manufactured on 200nm process technology Flexible sector arch itecture — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors (byte mode) — One 8 Kword, tw o 4 Kword, one 16 Kword, and thirty-one 32 Kword sectors (word mode) High per formance — Access times as fast as 70 ns @ Enhanced Temp [/ET] — Extended temp range available [/XT] (-55°C to + 125°C) „ „ „ „ Sector Protecti on features — A hardware method of lo cking a sector to prevent any program o r erase operations within that sector Sectors can be locked in-system or via programming equipment — Temporary Sector Unp.
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