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AGR19060E

TriQuint Semiconductor
Part Number AGR19060E
Manufacturer TriQuint Semiconductor
Description Transistor
Published Oct 5, 2009
Detailed Description AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19060E is a 60 W, 28 V N-channel la...
Datasheet PDF File AGR19060E PDF File

AGR19060E
AGR19060E

Overview
AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.
GSM Features Typical performance over entire GSM band: — P1dB: 60 W typical.
— Continuous wave (CW) power gain: @ P1dB = 14.
5 dB.
— CW efficiency @ P1dB = 53% typical.
— Return loss: –12 dB.
Device Performance Features High-reliability, gold-metalizatio...


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