Power-Transistor. IPB80N06S3L-06 Datasheet

IPB80N06S3L-06 Power-Transistor. Datasheet pdf. Equivalent

Part IPB80N06S3L-06
Description Power-Transistor
Feature OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified.
Manufacture Infineon Technologies
Datasheet
Download IPB80N06S3L-06 Datasheet

OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancem IPB80N06S3L-06 Datasheet
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IPB80N06S3L-06
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPB80N06S3L-06
IPI80N06S3L-06, IPP80N06S3L-06
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
5.6 m
80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80N06S3L-06
IPI80N06S3L-06
IPP80N06S3L-06
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N06L06
3N06L06
3N06L06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
I D,pulse
E AS
T C=25 °C
I D=40 A
Avalanche current, single pulse
I AS
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
80
320
455
80
±16
136
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2007-11-07



IPB80N06S3L-06
IPB80N06S3L-06
IPI80N06S3L-06, IPP80N06S3L-06
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 1.1 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area4)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=80 µA 1.2 1.7 2.2
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
Gate-source leakage current
Drain-source on-state resistance
V DS=55 V, V GS=0 V,
T j=125 °C2)
I GSS
V GS=16 V, V DS=0 V
R DS(on) V GS=5 V, I D=38 A
-
-
-
1 100
1 100 nA
8.3 10.4 m
V GS=5 V, I D=38 A,
SMD version
- 8.0 10.1
V GS=10 V, I D=56 A
- 4.9 5.9
V GS=10 V, I D=56 A,
SMD version
-
4.6 5.6
Rev. 1.1
page 2
2007-11-07





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