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FCA35N60
600V N-Channel MOSFET
Description
FCA35N60 N-Channel MOSFET March 2009 FCA35N60 600V N-Channel MOSFET Features 650V @ TJ = 150°C Typ.RDS(on) = 0.079Ω Ultra low gate charge ( Typ. Qg = 139nC ) Low effective output capacitance ( Typ. Coss.eff = 340pF ) 100% avalanche tested SuperFETTM Description SuperFETTM is Farichild’s proprietary, new generation of high voltage MOSFET family ...
Fairchild Semiconductor
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FCA35N60
600V N-Channel MOSFET
- Fairchild Semiconductor
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