N-Channel MOSFET. FDI030N06 Datasheet

FDI030N06 Datasheet PDF, Equivalent


Part Number

FDI030N06

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDI030N06 Datasheet


FDI030N06 Datasheet
June 2009
FDI030N06
N-Channel PowerTrench® MOSFET
60V, 193A, 3.2m
tm
Features
• RDS(on) = 2.6m( Typ.)@ VGS = 10V, ID = 75A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Convertors / Synchronous Rectification
D
GDS
I2-PAK
FDI Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
Ratings
VDSS
Drain to Source Voltage
www.DataVSGhSeSet4U.com Gate to Source Voltage
ID Drain Current
-Continuous (TC = 25oC, Silicon Limited)
-Continuous (TC = 100oC, Silicon Limited)
-Continuous (TC = 25oC, Package Limited)
IDM Drain Current
- Pulsed
(Note 1)
EAS Single Pulsed Avalanche Energy
(Note 2)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation
(TC = 25oC)
- Derate above 25oC
60
±20
193*
136*
120
772
1434
6
231
1.54
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.65
62.5
Units
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FDI030N06 Rev. A
1
www.fairchildsemi.com

FDI030N06 Datasheet
Package Marking and Ordering Information
Device Marking
FDI030N06
Device
FDI030N06
Package
TO-262
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TC = 25oC
ID = 1mA, Referenced to 25oC
VDS = 48V, VGS = 0V
VDS = 48V, TC = 150oC
VGS = ±20V, VDS = 0V
Min.
60
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 75A
VDS = 10V, ID = 75A
(Note 4)
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 48V, ID = 75A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 30V, ID = 75A
VGS = 10V, RGEN = 4.7
(Note 4, 5)
-
-
-
-
Drain-Source Diode Characteristics
www.DataSIhSeet4U.com Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 75A
dIF/dt = 100A/µs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.51mH, IAS = 75A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 75A, di/dt 450A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
(Note 4)
-
-
-
-
-
Typ.
-
0.05
-
-
-
3.5
2.6
154
7380
1095
415
116
40
35
39
178
54
33
-
-
-
46
50
Max. Units
-
-
1
500
±100
V
V/oC
µA
nA
4.5 V
3.2 m
-S
9815
1455
625
151
-
-
pF
pF
pF
nC
nC
nC
87 ns
366 ns
118 ns
76 ns
193 A
772 A
1.3 V
- ns
- nC
FDI030N06 Rev. A
2 www.fairchildsemi.com


Features Datasheet pdf FDI030N06 N-Channel PowerTrench® MOSFET June 2009 FDI030N06 N-Channel PowerT rench MOSFET 60V, 193A, 3.2mΩ Feature s • RDS(on) = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge • High Performanc e Trench Technology for Extremely Low R DS(on) • High Power and Current Handl ing Capability • RoHS Compliant tm ® Description This N-Channel MOSFET i s produced using Fairchild Semiconducto r’s advanced PowerTrench process that has been especially tailored to minimi ze the on-state resistance and yet main tain superior switching performance. A pplication • DC to DC Convertors / Sy nchronous Rectification D G G D S I2 -PAK FDI Series S MOSFET Maximum Ratin gs TC = 25oC unless otherwise noted Sym bol VDSS Drain to Source Voltage www.Da taSheet4U.com V Gate to Source Voltage GSS Parameter Ratings 60 ±20 193* 13 6* 120 772 1434 6 231 1.54 -55 to +175 300 Units V V A A mJ V/ns W W/oC oC o -Continuous (TC = 25oC, Silicon Limited) ID IDM EAS dv/dt PD TJ, TSTG TL Drain Curren.
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