N-Channel MOSFET. FDMC15N06 Datasheet

FDMC15N06 Datasheet PDF, Equivalent


Part Number

FDMC15N06

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDMC15N06 Datasheet PDF


FDMC15N06 Datasheet
FDMC15N06
N-Channel MOSFET
55V, 15A, 0.090
Features
• RDS(on) = 0.075( Typ.)@ VGS = 10V, ID = 15A
• 100% Avalanche Tested
• RoHS Compliant
July 2009
Description
These N-Channel power MOSFETs are manufactured using the
innovative UItraFET process. This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance.This device is capable of
withstanding high energy in the avalanche mode and the diode
exhibits very low reverse recovery time and stored charge. It was
designed for use in applications where power efficiency is
important, such as switching regulators, switching converters,
motor drivers, relay drivers, lowvoltage bus switches, and power
management in portable and battery-operated products.
Top Bottom
Pin 1
S SG
S
D5
D6
MLP 3.3x3.3
DD
DD
D7
D8
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
www.DataShVeDeStS4U.com
VGSS
ID
IDM
EAS
IAR
EAR
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Continuous (TA = 25oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
(TC = 25oC)
(TA = 25oC)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1a)
(Note 2)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
Ratings
55
±20
15
9
2.4
60
36
15
3.5
35
2.3
-55 to +150
300
Ratings
3.5
53
4G
3S
2S
1S
Units
V
V
A
A
A
mJ
A
mJ
W
W
oC
oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FDMC15N06 Rev. A
1
www.fairchildsemi.com

FDMC15N06 Datasheet
Package Marking and Ordering Information
Device Marking
FDMC15N06
Device
FDMC15N06
Package
Power 33
Reel Size
13"
Tape Width
12mm
Quantity
3000 units
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TC = 25oC
ID = 250µA, Referenced to 25oC
VDS = 50V, VGS = 0V
VDS = 45V, TC = 150oC
VGS = ±20V, VDS = 0V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 15A
VDS = 20V, ID = 15A
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Qgd Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 30V,ID = 15A
VGS = 10V
(Note 4)
Min.
55
-
-
-
-
2.0
-
-
-
-
-
-
-
-
Typ.
-
70
-
-
-
-
0.75
5
265
97
28
8.8
1.7
3.6
Max. Units
-
-
1
250
±100
V
V/oC
µA
nA
4.0 V
0.90
-S
350 pF
130 pF
42 pF
11.5 nC
- nC
- nC
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 30V, ID = 15A
RG = 25
(Note 4)
-
-
-
-
9.5 29 ns
36.5 83 ns
22.5 55 ns
22 54 ns
www.DataSDhreaeti4nU-S.coomurce Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
- - 15 A
ISM Maximum Pulsed Drain to Source Diode Forward Current
- - 60 A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 15A
- - 1.25 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 15A
- 30 - ns
dIF/dt = 100A/µs
(Note 5)
-
35
- nC
Notes:
1: RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
2: Repetitive Rating: Pulse width limited by maximum junction temperature
3: L = 1mH, IAS = 8.5A, RG = 25, Starting TJ = 25°C
4: Essentially Independent of Operating Temperature Typical Characteristics
5: ISD 15A, di/dt 200A/µs, VDD 40V, Starting TJ = 25°C
FDMC15N06 Rev. A
2
www.fairchildsemi.com


Features Datasheet pdf FDMC15N06 N-Channel MOSFET July 2009 F DMC15N06 N-Channel MOSFET 55V, 15A, 0.0 90Ω Features • RDS(on) = 0.075Ω ( Typ.)@ VGS = 10V, ID = 15A • 100% Av alanche Tested • RoHS Compliant Desc ription These N-Channel power MOSFETs a re manufactured using the innovative UI traFET process. This advanced process t echnology achieves the lowest possible on-resistance per silicon area, resulti ng in outstanding performance.This devi ce is capable of withstanding high ener gy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power effici ency is important, such as switching re gulators, switching converters, motor d rivers, relay drivers, lowvoltage bus s witches, and power management in portab le and battery-operated products. Top Pin 1 S S S G Bottom D D D D D 5 6 7 8 4 3 2 1 G S S S D D D MLP 3.3x3.3 MOSFET Maximum Ratings TC = 25oC unles s otherwise noted Symbol VDSS www.DataSheet4U.com VGSS ID IDM EAS IAR EAR.
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