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IXZ2210N50L Datasheet, Equivalent, RF MOSFET.

N-Channel Linear 175MHz RF MOSFET

N-Channel Linear 175MHz RF MOSFET

 

 

 

Part IXZ2210N50L
Description N-Channel Linear 175MHz RF MOSFET
Feature IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175M Hz RF MOSFET Low Capacitance Z-MOSTM MO SFET Process Optimized for Linear Opera tion Ideal for Class AB & C, Broadcast & Communications Applications Note: All data is per the IXZ210N50L single ende d device unless otherwise noted.
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv /dt Test Conditions TJ = 25°C to 150° C TJ = 25°C to 150°C; RGS = 1 MΩ Co ntinuous Transient Tc = 25°C Tc = 25° C, pulse width limited by TJM Tc = 25° C Tc = 25°C IS ≤ IDM, di/dt ≤ 1 00A/µs, VDD ≤ VDSS, Tj ≤ 150°C, R G = 0.
2Ω IS = 0 VDSS ID25 = = 500 .
Manufacture IXYS Corporation
Datasheet
Download IXZ2210N50L Datasheet
Part IXZ2210N50L
Description N-Channel Linear 175MHz RF MOSFET
Feature IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175M Hz RF MOSFET Low Capacitance Z-MOSTM MO SFET Process Optimized for Linear Opera tion Ideal for Class AB & C, Broadcast & Communications Applications Note: All data is per the IXZ210N50L single ende d device unless otherwise noted.
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv /dt Test Conditions TJ = 25°C to 150° C TJ = 25°C to 150°C; RGS = 1 MΩ Co ntinuous Transient Tc = 25°C Tc = 25° C, pulse width limited by TJM Tc = 25° C Tc = 25°C IS ≤ IDM, di/dt ≤ 1 00A/µs, VDD ≤ VDSS, Tj ≤ 150°C, R G = 0.
2Ω IS = 0 VDSS ID25 = = 500 .
Manufacture IXYS Corporation
Datasheet
Download IXZ2210N50L Datasheet

IXZ2210N50L

IXZ2210N50L
IXZ2210N50L

IXZ2210N50L

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