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IXZ2210N50L Datasheet, Equivalent, RF MOSFET.N-Channel Linear 175MHz RF MOSFET N-Channel Linear 175MHz RF MOSFET |
| Part | IXZ2210N50L |
|---|---|
| Description | N-Channel Linear 175MHz RF MOSFET |
| Feature | IXZ210N50L & IXZ2210N50L
RF Power MOSFET
N-Channel Enhancement Mode Linear 175M Hz RF MOSFET Low Capacitance Z-MOSTM MO SFET Process Optimized for Linear Opera tion Ideal for Class AB & C, Broadcast & Communications Applications
Note: All data is per the IXZ210N50L single ende d device unless otherwise noted. Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv /dt Test Conditions TJ = 25°C to 150° C TJ = 25°C to 150°C; RGS = 1 MΩ Co ntinuous Transient Tc = 25°C Tc = 25° C, pulse width limited by TJM Tc = 25° C Tc = 25°C IS ≤ IDM, di/dt ≤ 1 00A/µs, VDD ≤ VDSS, Tj ≤ 150°C, R G = 0. 2Ω IS = 0 VDSS ID25 = = 500 . |
| Manufacture | IXYS Corporation |
| Datasheet |
| Part | IXZ2210N50L |
|---|---|
| Description | N-Channel Linear 175MHz RF MOSFET |
| Feature | IXZ210N50L & IXZ2210N50L
RF Power MOSFET
N-Channel Enhancement Mode Linear 175M Hz RF MOSFET Low Capacitance Z-MOSTM MO SFET Process Optimized for Linear Opera tion Ideal for Class AB & C, Broadcast & Communications Applications
Note: All data is per the IXZ210N50L single ende d device unless otherwise noted. Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv /dt Test Conditions TJ = 25°C to 150° C TJ = 25°C to 150°C; RGS = 1 MΩ Co ntinuous Transient Tc = 25°C Tc = 25° C, pulse width limited by TJM Tc = 25° C Tc = 25°C IS ≤ IDM, di/dt ≤ 1 00A/µs, VDD ≤ VDSS, Tj ≤ 150°C, R G = 0. 2Ω IS = 0 VDSS ID25 = = 500 . |
| Manufacture | IXYS Corporation |
| Datasheet |
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