CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
18-Mbit QDR™-II+ SRAM 4-Word Burst
Architecture (2.5 Cycle Read Latency)
Features
■ Separate independent read and write data ports
❐ Supports concurrent transactions
■ 300 MHz to 400 MHz clock for high bandwidth
■ 4-word burst to reduce address bus frequency
■ Double Data Rate (DDR) interfaces on both read and write ports
(data transferred at 800 MHz) at 400 MHz
■ Read latency of 2.5 clock cycles
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Echo clocks (CQ and CQ) simplify data capture in high speed
systems
■ Single multiplexed address input bus latches address inputs
for both read and write ports
■ Separate port selects for depth expansion
■ Data valid pin (QVLD) to indicate valid data on the output
■ Synchronous internally self-timed writes
■ Available in x8, x9, x18, and x36 configurations
■ Full data coherency providing most current data
■ Core VDD = 1.8V ± 0.1V; IO VDDQ = 1.4V to VDD[1]
■ Available in 165-ball FBGA package (13 x 15 x 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ Variable drive HSTL output buffers
www■.DJaTtaASGhe1e1t44U9..c1ocmompatible test access port
■ Delay Lock Loop (DLL) for accurate data placement
Configurations
With cycle read latency of 2.5 cycles:
CY7C1161V18 – 2M x 8
CY7C1176V18 – 2M x 9
CY7C1163V18 – 1M x 18
CY7C1165V18 – 512K x 36
Functional Description
The CY7C1161V18, CY7C1176V18, CY7C1163V18, and
CY7C1165V18 are 1.8V Synchronous Pipelined SRAMs
equipped with QDR™-II+ architecture. QDR-II+ architecture
consists of two separate ports to access the memory array. The
read port has dedicated data outputs to support read operations
and the write port has dedicated data inputs to support write
operations. QDR-II+ architecture has separate data inputs and
data outputs to completely eliminate the need to turn around the
data bus that is required with common IO devices. Each port can
be accessed through a common address bus. Addresses for
read and write addresses are latched onto alternate rising edges
of the input (K) clock. Accesses to the QDR-II+ read and write
ports are completely independent of one another. In order to
maximize data throughput, both read and write ports are
equipped with Double Data Rate (DDR) interfaces. Each
address location is associated with four 8-bit words
(CY7C1161V18), 9-bit words (CY7C1176V18), 18-bit words
(CY7C1163V18), or 36-bit words (CY7C1165V18) that burst
sequentially into or out of the device. Because data can be trans-
ferred into and out of the device on every rising edge of both input
clocks K and K, memory bandwidth is maximized while simpli-
fying system design by eliminating bus turnarounds.
Depth expansion is accomplished with port selects for each port.
Port selects allow each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the or K or K input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
Selection Guide
Maximum Operating Frequency
Maximum Operating Current
400 MHz
400
1080
375 MHz
375
1020
333 MHz
333
920
300 MHz
300
850
Unit
MHz
mA
Note
1.
The QDR consortium
= 1.4V to VDD.
specification
for
VDDQ
is
1.5V
+
0.1V.
The
Cypress
QDR
devices
exceed
the
QDR
consortium
specification
and
are
capable
of
supporting
VDDQ
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-06582 Rev. *C
• San Jose, CA 95134-1709 • 408-943-2600
Revised June 15, 2007
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