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SKM300GA123D Datasheet, Equivalent, IGBT.IGBT IGBT |
　
　
　
| Part | SKM300GA123D |
|---|---|
| Description | IGBT |
| Feature | Absolute Maximum Ratings
Symbol VCES VCG R IC ICM VGES Ptot Tj, (Tstg) Visol hum idity climate Conditions 1) RGE = 20 kâ „¦ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T. 1 Valu es Units 1200 1200 300 / 220 600 / 440 ± 20 1660 – 40 . . . +150 (125) 2 500 7) Class F 40/125/56 300 / 200 600 / 4 40 2200 24200 V V A A V W °C V SEMITR ANS® M IGBT Modules SKM 300 GA 123 D Inverse Diode Tcase = 25/80 °C IF= – IC IFM= – ICM Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin. ; Tj = 150 °C I FSM tp = 10 ms; Tj = 150 °C I2t A A A A2s SEMITRANS 4 Characteristi . |
| Manufacture | Semikron |
| Datasheet |
| Part | SKM300GA123D |
|---|---|
| Description | IGBT |
| Feature | Absolute Maximum Ratings
Symbol VCES VCG R IC ICM VGES Ptot Tj, (Tstg) Visol hum idity climate Conditions 1) RGE = 20 kâ „¦ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T. 1 Valu es Units 1200 1200 300 / 220 600 / 440 ± 20 1660 – 40 . . . +150 (125) 2 500 7) Class F 40/125/56 300 / 200 600 / 4 40 2200 24200 V V A A V W °C V SEMITR ANS® M IGBT Modules SKM 300 GA 123 D Inverse Diode Tcase = 25/80 °C IF= – IC IFM= – ICM Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin. ; Tj = 150 °C I FSM tp = 10 ms; Tj = 150 °C I2t A A A A2s SEMITRANS 4 Characteristi . |
| Manufacture | Semikron |
| Datasheet |
　
　
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