2SD1485 Transistor Datasheet

2SD1485 Datasheet, PDF, Equivalent


Part Number

2SD1485

Description

Silicon NPN Power Transistor

Manufacture

Inchange Semiconductor

Total Page 2 Pages
Datasheet
Download 2SD1485 Datasheet


2SD1485
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1485
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max)@IC= 3A
·Wide Area of Safe Operation
·Complement to Type 2SB1054
APPLICATIONS
·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
100 V
wwwVCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
5V
www.DataSheet4U.com
IC Collector Current-Continuous
5A
ICM Collector Current-Peak
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
8A
3
W
60
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn

2SD1485
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1485
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 5V
ICBO Collector Cutoff Current
VCB= 100V; IE= 0
IEBO Emitter Cutoff Current
VEB= 3V; IC= 0
2.0 V
1.8 V
50 μA
50 μA
hFE-1
DC Current Gain
IC= 20mA; VCE= 5V
20
hFE-2
DC Current Gain
IC= 1A; VCE= 5V
i.cnhFE-3
DC Current Gain
IC= 3A; VCE= 5V
.iscsemCOB Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
wwwfT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V
40 200
20
170 pF
20 MHz
‹ hFE-2 Classifications
www.DataSheet4U.com
RQ
P
40-80 60-120 100-200
isc Websitewww.iscsemi.cn
2


Features INCHANGE Semiconductor isc Product Spec ification isc Silicon NPN Power Transi stor 2SD1485 DESCRIPTION ·Low Collec tor Saturation Voltage: VCE(sat)= 2.0V( Max)@IC= 3A ·Wide Area of Safe Operati on ·Complement to Type 2SB1054 APPLIC ATIONS ·Designed for high power amplif ier applications. ABSOLUTE MAXIMUM RAT INGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Col lector-Emitter Voltage VEBO Emitter-B ase Voltage www.DataSheet4U.com w w w s c s .i 100 V 100 V 5 V 5 A 8 A 3 W UNIT n c . i m e IC Collector Curre nt-Continuous ICM Collector Current-P eak Collector Power Dissipation @ Ta=25 ℃ PC Collector Power Dissipation @ T C=25℃ TJ Junction Temperature 60 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsem i.cn INCHANGE Semiconductor isc Produ ct Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYM BOL PARAMETER CONDITIONS MIN 2SD1485 TYP. MAX UNIT VCE(sat) Collector-Emitt.
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