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5SMX12L2510 Datasheet, Equivalent, IGBT-Die.

IGBT-Die

IGBT-Die

 

 

 

Part 5SMX12L2510
Description IGBT-Die
Feature VCE IC = = 2500 V 50 A IGBT-Die 5SMX 12L2510 Die size: 12.
4 x 12.
4 mm Doc.
No.
5SYA 1622-03 Sep 05


• Low loss, rugged SPT technology Smo oth switching for good EMC Large bondab le emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitt er voltage DC collector current Peak co llector current Gate-emitter voltage IG BT short circuit SOA Junction temperatu re www.
DataSheet4U.
com 1) 1) Symbol C onditions VCES IC ICM VGES tpsc Tvj VCC = 2000 V, VCEM ≤ 2500 V VGE ≤ 15 V , Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V min max 2500 50 100 .
Manufacture ABB
Datasheet
Download 5SMX12L2510 Datasheet
Part 5SMX12L2510
Description IGBT-Die
Feature VCE IC = = 2500 V 50 A IGBT-Die 5SMX 12L2510 Die size: 12.
4 x 12.
4 mm Doc.
No.
5SYA 1622-03 Sep 05


• Low loss, rugged SPT technology Smo oth switching for good EMC Large bondab le emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitt er voltage DC collector current Peak co llector current Gate-emitter voltage IG BT short circuit SOA Junction temperatu re www.
DataSheet4U.
com 1) 1) Symbol C onditions VCES IC ICM VGES tpsc Tvj VCC = 2000 V, VCEM ≤ 2500 V VGE ≤ 15 V , Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V min max 2500 50 100 .
Manufacture ABB
Datasheet
Download 5SMX12L2510 Datasheet

5SMX12L2510

5SMX12L2510
5SMX12L2510

5SMX12L2510

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