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5SMX12L2510 Datasheet, Equivalent, IGBT-Die.IGBT-Die IGBT-Die |
　
　
　
| Part | 5SMX12L2510 |
|---|---|
| Description | IGBT-Die |
| Feature | VCE IC
= =
2500 V 50 A
IGBT-Die
5SMX 12L2510
Die size: 12. 4 x 12. 4 mm Doc. No. 5SYA 1622-03 Sep 05 • • • â €¢ Low loss, rugged SPT technology Smo oth switching for good EMC Large bondab le emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitt er voltage DC collector current Peak co llector current Gate-emitter voltage IG BT short circuit SOA Junction temperatu re www. DataSheet4U. com 1) 1) Symbol C onditions VCES IC ICM VGES tpsc Tvj VCC = 2000 V, VCEM ≤ 2500 V VGE ≤ 15 V , Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V min max 2500 50 100 . |
| Manufacture | ABB |
| Datasheet |
| Part | 5SMX12L2510 |
|---|---|
| Description | IGBT-Die |
| Feature | VCE IC
= =
2500 V 50 A
IGBT-Die
5SMX 12L2510
Die size: 12. 4 x 12. 4 mm Doc. No. 5SYA 1622-03 Sep 05 • • • â €¢ Low loss, rugged SPT technology Smo oth switching for good EMC Large bondab le emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitt er voltage DC collector current Peak co llector current Gate-emitter voltage IG BT short circuit SOA Junction temperatu re www. DataSheet4U. com 1) 1) Symbol C onditions VCES IC ICM VGES tpsc Tvj VCC = 2000 V, VCEM ≤ 2500 V VGE ≤ 15 V , Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V min max 2500 50 100 . |
| Manufacture | ABB |
| Datasheet |
　
　
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