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5SMX12N4507 Datasheet, Equivalent, IGBT-Die.IGBT-Die IGBT-Die |
　
　
　
| Part | 5SMX12N4507 |
|---|---|
| Description | IGBT-Die |
| Feature | VCE IC
= =
4500 V 40 A
IGBT-Die
5SMX 12N4507
Die size: 14. 3 x 14. 3 mm Doc. No. 5SYA1626-03 July 06 • • • â €¢ Low loss, rugged SPT technology Smo oth switching for good EMC Emitter meta llisation optimized for press-pack pack aging Passivation: SIPOS and Silicon Ni tride plus Polyimide Maximum rated val ues Parameter Collector-emitter voltage DC collector current Peak collector cu rrent Gate-emitter voltage IGBT short c ircuit SOA Junction temperature www. Dat aSheet4U. com 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 3400 V, VCEM ≤ 4500 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE . |
| Manufacture | ABB |
| Datasheet |
| Part | 5SMX12N4507 |
|---|---|
| Description | IGBT-Die |
| Feature | VCE IC
= =
4500 V 40 A
IGBT-Die
5SMX 12N4507
Die size: 14. 3 x 14. 3 mm Doc. No. 5SYA1626-03 July 06 • • • â €¢ Low loss, rugged SPT technology Smo oth switching for good EMC Emitter meta llisation optimized for press-pack pack aging Passivation: SIPOS and Silicon Ni tride plus Polyimide Maximum rated val ues Parameter Collector-emitter voltage DC collector current Peak collector cu rrent Gate-emitter voltage IGBT short c ircuit SOA Junction temperature www. Dat aSheet4U. com 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 3400 V, VCEM ≤ 4500 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE . |
| Manufacture | ABB |
| Datasheet |
　
　
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