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5SMX12N4507 Datasheet, Equivalent, IGBT-Die.

IGBT-Die

IGBT-Die

 

 

 

Part 5SMX12N4507
Description IGBT-Die
Feature VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.
3 x 14.
3 mm Doc.
No.
5SYA1626-03 July 06


• Low loss, rugged SPT technology Smo oth switching for good EMC Emitter meta llisation optimized for press-pack pack aging Passivation: SIPOS and Silicon Ni tride plus Polyimide Maximum rated val ues Parameter Collector-emitter voltage DC collector current Peak collector cu rrent Gate-emitter voltage IGBT short c ircuit SOA Junction temperature www.
Dat aSheet4U.
com 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 3400 V, VCEM ≤ 4500 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE .
Manufacture ABB
Datasheet
Download 5SMX12N4507 Datasheet
Part 5SMX12N4507
Description IGBT-Die
Feature VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.
3 x 14.
3 mm Doc.
No.
5SYA1626-03 July 06


• Low loss, rugged SPT technology Smo oth switching for good EMC Emitter meta llisation optimized for press-pack pack aging Passivation: SIPOS and Silicon Ni tride plus Polyimide Maximum rated val ues Parameter Collector-emitter voltage DC collector current Peak collector cu rrent Gate-emitter voltage IGBT short c ircuit SOA Junction temperature www.
Dat aSheet4U.
com 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 3400 V, VCEM ≤ 4500 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE .
Manufacture ABB
Datasheet
Download 5SMX12N4507 Datasheet

5SMX12N4507

5SMX12N4507
5SMX12N4507

5SMX12N4507

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