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IRFM220A Datasheet, Equivalent, Power MOSFET.Advanced Power MOSFET Advanced Power MOSFET |
　
　
　
| Part | IRFM220A |
|---|---|
| Description | Advanced Power MOSFET |
| Feature | Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Te chnology Lower Input Capacitance Improv ed Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Ma x. ) @ VDS = 200V Low RDS(ON) : 0. 626 â„ ¦ (Typ. ) IRFM220A BVDSS = 200 V RDS(on ) = 0. 8 Ω ID = 1. 13 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Ma ximum Ratings Symbol VDSS ID IDM VGS EA S IAR EAR dv/dt www. DataSheet4U. com Ch aracteristic Drain-to-Source Voltage Co ntinuous Drain Current (TA=25 oC ) Cont inuous Drain Current (TA=70 Drain Curre nt-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche E . |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
| Part | IRFM220A |
|---|---|
| Description | Advanced Power MOSFET |
| Feature | Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Te chnology Lower Input Capacitance Improv ed Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Ma x. ) @ VDS = 200V Low RDS(ON) : 0. 626 â„ ¦ (Typ. ) IRFM220A BVDSS = 200 V RDS(on ) = 0. 8 Ω ID = 1. 13 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Ma ximum Ratings Symbol VDSS ID IDM VGS EA S IAR EAR dv/dt www. DataSheet4U. com Ch aracteristic Drain-to-Source Voltage Co ntinuous Drain Current (TA=25 oC ) Cont inuous Drain Current (TA=70 Drain Curre nt-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche E . |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
　
　
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