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Power MOSFET. IRFM220A Datasheet

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Power MOSFET. IRFM220A Datasheet






IRFM220A MOSFET. Datasheet pdf. Equivalent




IRFM220A MOSFET. Datasheet pdf. Equivalent





Part

IRFM220A
Description

Advanced Power MOSFET


Feature


 Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Te chnology Lower Input Capacitance Improv ed Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Ma x.) @ VDS = 200V Low RDS(ON) : 0.626 (Typ.) IRFM220A BVDSS = 200 V RDS(on ) = 0.8 Ω ID = 1.13 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Ma ximum Ratings Symbol VD.
Manufacture

Fairchild Semiconductor
Datasheet
Download IRFM220A Datasheet


Fairchild Semiconductor IRFM220A

IRFM220A; SS ID IDM VGS EAS IAR EAR dv/dt www.Data Sheet4U.com Characteristic Drain-to-So urce Voltage Continuous Drain Current ( TA=25 oC ) Continuous Drain Current (TA =70 Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25 oC ) * Linear Derating Factor *.


Fairchild Semiconductor IRFM220A

Operating Junction and Storage Temperat ure Range Maximum Lead Temp. for Solder ing Purposes, 1/8 “ from case for 5-s econds 2 O 1 O 1 O 3 O o Value 200 1.1 3 0.9 1 O Units V A A V mJ A mJ V/ns W W/ C o ) C 9 + _ 30 77 1.13 0.24 5.0 2.4 0.019 - 55 to +150 PD TJ , TSTG TL o C 300 Thermal Resistance Symbo l RθJA Characteristic Junction-to-Ambi ent * Typ. -Max. 52 U.


Fairchild Semiconductor IRFM220A

nits o C/W * When mounted on the minim um pad size recommended (PCB Mount). R ev. B ©1999 Fairchild Semiconductor C orporation IRFM220A Symbol BVDSS BV/ TJ ∆ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Bre akdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Sour ce Leakage , Forward Ga.

Part

IRFM220A
Description

Advanced Power MOSFET


Feature


 Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Te chnology Lower Input Capacitance Improv ed Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Ma x.) @ VDS = 200V Low RDS(ON) : 0.626 (Typ.) IRFM220A BVDSS = 200 V RDS(on ) = 0.8 Ω ID = 1.13 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Ma ximum Ratings Symbol VD.
Manufacture

Fairchild Semiconductor
Datasheet
Download IRFM220A Datasheet




IRFM220A
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
Low RDS(ON) : 0.626 Ω(Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
www.DataSheet4U.com PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TA=25oC )
Continuous Drain Current (TA=70 oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25oC )*
Linear Derating Factor *
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
IRFM220A
BVDSS = 200 V
RDS(on) = 0.8 Ω
ID = 1.13 A
SOT-223
1
3
2
1. Gate 2. Drain 3. Source
Value
200
1.13
0.9
9
+_ 30
77
1.13
0.24
5.0
2.4
0.019
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Thermal Resistance
Symbol
RθJA
Characteristic
Junction-to-Ambient *
Typ.
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
52
Units
oC/W
Rev. B
©1999 Fairchild Semiconductor Corporation




IRFM220A
IRFM220A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TA=25oC unless otherwise specified)
Symbol
BVDSS
∆BV/ ∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
200 -- --
-- 0.24 --
2.0 -- 4.0
-- -- 100
-- -- -100
-- -- 10
-- -- 100
V VGS=0V,ID=250µA
V/oC ID=250 µA See Fig 7
V VDS=5V,ID=250 µA
nA VGS=30V
VGS=-30V
VDS=200V
µA VDS=160V,TA=125 oC
Static Drain-Source
On-State Resistance
-- -- 0.8 Ω VGS=10V,ID=0.57A
O4
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 1.36 -- Ω VDS=40V,ID=0.57A
O4
-- 275 360
--
55
65
VGS=0V,VDS=25V,f =1MHz
pF
See Fig 5
-- 25 30
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 10 30
-- 11 30
VDD=100V,ID=5A,
-- 26 60 ns RG=18Ω
See Fig 13
-- 15 40
O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-- 12 17
VDS=160V,VGS=10V,
-- 2.4
-- 6.2
--
--
nC
ID=5A
See Fig 6 & Fig 12
O4 O5
Source-Drain Diode Ratings and Characteristics
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Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
IS Continuous Source Current
-- -- 1.13
Integral reverse pn-diode
A
ISM Pulsed-Source Current
O1 -- -- 9
in the MOSFET
VSD Diode Forward Voltage
O4 -- -- 1.5 V TJ=25oC,IS=1.13A,VGS=0V
trr Reverse Recovery Time
-- 122 -- ns TJ=25oC,IF=5A
Qrr Reverse Recovery Charge
-- 0.51 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=90mH, IAS=1.13A, VDD=50V, RG=27Ω , Starting TJ =25 oC
O3 ISD<_ 5A, di/dt <_180A/ µs, VDD <_BVDSS , Starting TJ =25 oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature




IRFM220A
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
101 Top :
VGS
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
@ Notes :
1. 250 µs Pulse Test
2. TA = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
2.0
1.5 VGS = 10 V
1.0
0.5 VGS = 20 V
@ Note : TJ = 25 oC
0.0
0 3 6 9 12 15 18
ID , Drain Current [A]
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Fig 5. Capacitance vs. Drain-Source Voltage
500
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
400 Crss= Cgd
C iss
300
200 C oss
100 C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRFM220A
Fig 2. Transfer Characteristics
101
100
10-1
2
150 oC
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. V = 40 V
DS
3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
10-1
0.4
0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-Drain Voltage [V]
1.8
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 40 V
10
VDS = 100 V
VDS = 160 V
5
@ Notes : ID = 5.0 A
0
0 3 6 9 12
QG , Total Gate Charge [nC]



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