P-Channel E nhancement Mode Field Effect Transistor
Description
S amHop Microelectronics C orp.
S T S 2611
F E B 25 2005
P -C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
V DS S
-20V
F E AT UR E S
( m W ) Max
ID
-2.8A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
90 @ V G S = -4.5V 150 @ V G S = -2.5V
R ugged and reliable. S OT-26 package.
1 2 5 6
TS OP 6 Top View
D
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