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M36P0R9070E0 Datasheet, Equivalent, Burst PSRAM.512 Mbit Flash memory 128 Mbit (Burst) PSRAM 512 Mbit Flash memory 128 Mbit (Burst) PSRAM |
　
　
　
| Part | M36P0R9070E0 |
|---|---|
| Description | 512 Mbit Flash memory 128 Mbit (Burst) PSRAM |
| Feature | M36P0R9070E0
512 Mbit (x16, Multiple Ban k, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1. 8V supply, Multi -Chip Package Feature summary ■Mult i-Chip Package – 1 die of 512 Mbit (3 2Mb x 16, Multiple Bank, Multi-Level, B urst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM Supply voltage – VDD F = VCCP = VDDQ = 1. 7 to 1. 95V – VPPF = 9V for fast program Electronic signa ture – Manufacturer Code: 20h – Dev ice Code: 8819 ECOPACK® package availa ble FBGA ■TFBGA107 (ZAC) ■■■Flash memory ■Block locking – All Blocks locked at power-up – Any combination of Blocks can be locked wit . |
| Manufacture | Numonyx |
| Datasheet |
| Part | M36P0R9070E0 |
|---|---|
| Description | 512 Mbit Flash memory 128 Mbit (Burst) PSRAM |
| Feature | M36P0R9070E0
512 Mbit (x16, Multiple Ban k, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1. 8V supply, Multi -Chip Package Feature summary ■Mult i-Chip Package – 1 die of 512 Mbit (3 2Mb x 16, Multiple Bank, Multi-Level, B urst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM Supply voltage – VDD F = VCCP = VDDQ = 1. 7 to 1. 95V – VPPF = 9V for fast program Electronic signa ture – Manufacturer Code: 20h – Dev ice Code: 8819 ECOPACK® package availa ble FBGA ■TFBGA107 (ZAC) ■■■Flash memory ■Block locking – All Blocks locked at power-up – Any combination of Blocks can be locked wit . |
| Manufacture | Numonyx |
| Datasheet |
　
　
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