2SK3594-01 MOSFET Datasheet

2SK3594-01 Datasheet PDF, Equivalent


Part Number

2SK3594-01

Description

N-CHANNEL SILICON POWER MOSFET

Manufacture

Fuji Electric

Total Page 4 Pages
PDF Download
Download 2SK3594-01 Datasheet PDF


2SK3594-01
2SK3594-01
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220AB
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
200 V
Continuous drain current
VDSX *5
ID
170 V
±45 A Equivalent circuit schematic
Pulsed drain current
ID(puls]
±180
A
Gate-source voltage
VGS
±30 V
Drain(D)
Non-repetitive Avalanche current IAS *2
45 A
Maximum Avalanche Energy
EAS *1
258.9
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20 kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Ta=25°C
Tc=25°C
5
2.02
270
kV/µs
W
Gate(G)
Source(S)
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=205µH, Vcc=48V,Tc=25°C, See to avalanche Energy Graph *2 Tch <=150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS <= 200V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
www.DataSheet4U.com
Item
Symbol
Test Conditions
Drain-source breakdown voltaget
V(BR)DSS
ID= 250µA VGS=0V
Gate threshold voltage
VGS(th)
ID= 250µA VDS=VGS
Min. Typ.
200
3.0
Max. Units
V
5.0 V
Zero gate voltage drain current
Gate-source leakage current
IDSS
IGSS
VDS=200V VGS=0V
VDS=160V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
25
250
10 100
µA
nA
Drain-source on-state resistance
RDS(on)
ID=15A VGS=10V
50 66 m
Forward transcondutance gfs ID=15A VDS=25V
12.5 25
S
Input capacitance
Ciss VDS=75V
1960 2940
pF
Output capacitance
Coss
VGS=0V
260 390
Reverse transfer capacitance
Turn-on time ton
Crss
td(on)
tr
f=1MHz
VCC=48V ID=15A
VGS=10V
18 27
20 30 ns
17 26
Turn-off time toff
td(off)
tf
RGS=10
53 80
19 29
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
QG
QGS
QGD
IAV
VSD
trr
Qrr
VCC=100V
ID=30A
VGS=10V
L=205µH Tch=25°C
IF=30A VGS=0V Tch=25°C
IF=30A VGS=0V
-di/dt=100A/µs Tch=25°C
51 76.5 nC
15 22.5
16 24
45 A
1.10 1.65 V
0.19 µs
1.4 µC
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/denshi/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.463 °C/W
62.0 °C/W
1

2SK3594-01
2SK3594-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
300
250
200
150
100
50
0
0 25 50 75 100 125 150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
120
20V
100
10V
8V
80 7.5V
60 7.0V
40
www.DataSheet4U.com
20
0
02
6.5V
6.0V
VGS=5.5V
468
VDS [V]
10 12
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0.1
1 10
ID [A]
100
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=48V
800
700
I =18A
AS
600
I =27A
AS
500
I =45A
AS
400
300
200
100
0
0 25 50 75 100 125 150
starting Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.20
0.15
VGS= 6.0V
5.5V
6.5V
7.0V
7.5V
8V
0.10 10V
20V
0.05
0.00
0
20 40 60 80 100 120
ID [A]
2


Features 2SK3594-01 FUJI POWER MOSFET 200304 Sup er FAP-G Series Features High speed swi tching Low on-resistance No secondary b readown Low driving power Avalanche-pro of N-CHANNEL SILICON POWER MOSFET Outl ine Drawings (mm) TO-220AB Application s Switching regulators UPS (Uninterrupt ible Power Supply) DC-DC converters Ma ximum ratings and characteristicAbsolut e maximum ratings (Tc=25°C unless othe rwise specified) Item Drain-source volt age Continuous drain current Pulsed dra in current Gate-source voltage Non-repe titive Avalanche current Maximum Avalan che Energy Maximum Drain-Source dV/dt P eak Diode Recovery dV/dt Max. power dis sipation Operating and storage temperat ure range Symbol V DS VDSX *5 ID ID(pul s] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt * 3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 200 170 ±45 ±180 ±30 45 258.9 20 5 2.02 270 +150 -55 to +150 Unit V V A A V A mJ kV/µs kV/µs W °C °C Equival ent circuit schematic Drain(D) Gate(G) Source(S) *1 L=205µH, Vcc=48V,Tc=25°C, See to avalanche Energy Graph *2.
Keywords 2SK3594-01, datasheet, pdf, Fuji Electric, N-CHANNEL, SILICON, POWER, MOSFET, SK3594-01, K3594-01, 3594-01, 2SK3594-0, 2SK3594-, 2SK3594, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)