2SF292200HYY CHIPS Datasheet

2SF292200HYY Datasheet PDF, Equivalent


Part Number

2SF292200HYY

Description

FAST RECOVERY DIODE CHIPS

Manufacture

Silan Microelectronics

Total Page 1 Pages
Datasheet
Download 2SF292200HYY Datasheet


2SF292200HYY
2SF292200HYY
2SF292200HYY FAST RECOVERY DIODE CHIPS
DESCRIPTION
Ø 2SF292200HYY is a fast recovery diode chips
fabricated in silicon epitaxial planar technology;
Ø Fast recovery times;
Ø High current capability;
Ø High surge current capability;
Ø Low forward voltage drop;
Ø Low reverse current leakage;
Ø Top metal is Ag, Back metal is Ag;
Ø Chip Size: 2920µm X 2920µm;
Ø Chip Thickness: 280±20µm;
Chip Topography and Dimensions
La: Chip Size:2920 µm;
Lb: Pad Size: 2840 µm;
ORDERING SPECIFICATIONS
Product Name
2SF292200HYY
Specification
For Au and AlSi wire bonding
package
ABSOLUTE MAXIMUM RATINGS
Parameters
www.DataSheMeta4xUim.coumm Repetitive Peak Reverse Voltage
Average Forward RectifiedCurrent@Tc=150°C
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
VRRM
IFAV
IFSM
TJ
TSTG
Ratings
200
20
390
175
-55~175
Unit
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25 )
Parameters
Reverse Voltage
Forward Voltage
Reverse Current
Reverse recovery time
Symbol
VBR
VF1
VF2
IR
Trr
Test Conditions
IR=50 A
IF=5A
IF=20A
VR=200V
IF=0.5A,IR=1A;Irr=0.25A
Min.
200
--
--
--
--
Max.
--
0.84
0.96
25
200
Unit
V
V
V
A
ns
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2008.06.06
Page 1 of 1


Features 2SF292200HYY 2SF292200HYY FAST RECOVERY DIODE CHIPS DESCRIPTION Ø Ø Ø Ø Ø Ø Ø Ø 2SF292200HYY is a fast recover y diode chips fabricated in silicon epi taxial planar technology; Fast recovery times; High current capability; High s urge current capability; Low forward vo ltage drop; Low reverse current leakage ; Top metal is Ag, Back metal is Ag; Ch ip Size: 2920µm X 2920µm; Chip Thickn ess: 280±20µm; Chip Topography and Di mensions La: Chip Size:2920 µm; Lb: Pa d Size: 2840 µm; Ø ORDERING SPECIFI CATIONS Product Name 2SF292200HYY Speci fication For Au and AlSi wire bonding p ackage ABSOLUTE MAXIMUM RATINGS Parame ters Maximum Repetitive Peak Reverse Vo ltage www.DataSheet4U.com Average Forwa rd RectifiedCurrent@Tc=150°C Peak Forw ard Surge Current@8.3ms Maximum Operati on Junction Temperature Storage Tempera ture Range Symbol VRRM IFAV IFSM TJ TST G Ratings 200 20 390 175 -55~175 Unit V A A °C °C ELECTRICAL CHARACTERISTIC S (Tamb=25 Parameters Reverse Voltage Forward Voltage Reverse Current Reverse rec.
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