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FLK017XP

Eudyna Devices
Part Number FLK017XP
Manufacturer Eudyna Devices
Description GaAs FET & HEMT Chips
Published Nov 22, 2009
Detailed Description FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) Hi...
Datasheet PDF File FLK017XP PDF File

FLK017XP
FLK017XP

Overview
FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.
5dBm(Typ.
) High Gain: G1dB = 8.
0dB(Typ.
) High PAE: ηadd = 26%(Typ.
) Proven Reliability Source Gate Drain DESCRIPTION The FLK017XP chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Condition Source Rating 15 -5 ...


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