AS3SSD4GB8PBG Chip Datasheet

AS3SSD4GB8PBG Datasheet PDF, Equivalent


Part Number

AS3SSD4GB8PBG

Description

Solid State Disk On Chip

Manufacture

Austin Semiconductor

Total Page 17 Pages
PDF Download
Download AS3SSD4GB8PBG Datasheet PDF


AS3SSD4GB8PBG
AUSTIN SEMICONDUCTOSRO, ILNICD. STATE DISK
PRELIMINARY
Austin Semiconductor, Inc.
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
Solid State Disk On Chip
(SSDoC)
FEATURES
Capacities
- 4 GB
- 8 GB
- 16 GB
PATA Compatibility
- ATA-5 compatible
- UDMA4 supported
- PIO Mode 4 supported
- MWDMA Mode 2 supported
Performance
- Sustained Sequential Read Bandwidth:16 MB/s
- Sustained Sequential Write Bandwidth: 5 MB/s
Form Factor
- BGA Package
• 31 mm (W) x 31 mm (L) x 4.2-7.8 mm (H)
• Weighs approximately 11 grams (TYP)
Each NAND component, either a 4, 8 or 16Gb
device, based on the use of single and stacked
silicon solutions
ECC correction = 6 Bytes within a 512 Byte
sector
www.DataASuhetoetm4Ua.ctoicm sleep mode
Controller contained in base interposer
SLC (Single-Level Cell) NAND Flash
Reliability
- Mean Time Between Failure (MTBF)
>2,000,000 Hours (est.)
- Program/Erase >1,000,000 Times (est.)
- Temp Cycle 500/1000 cycles, JEDEC A104
Condition B -55ºC to +125ºC
Power Supply Voltage: 5.0V or 3.3 V ± 10%
(TYP)
Power Consumption (Vcc = 5.0 V)
- Idle: 10 mW (TYP)
- Active: 255 mW (TYP)
Operating Temperature
- Commercial: 0C to 70C
- Industrial: -45C to 85C
Shock and Vibration
- Shock: 1500G MIL-STD0810F
- Vibration: 15 G RMS MIL-STD0810F
Compliances
- Lead free
- RoHS
- Sn/Pb Ball Option
OVERVIEW
The solid state disk is based on a proprietary
package stacking technology to create an extremely
space conscious, robust Solid State Disk. The SSD
is capable of operating in harsh, vibration prone
product platforms such embedded computing
applications, heavy transportation, ultra portables,
handhelds, mobile computing, digital
radio, high-speed networking & enterprise
applications, as well as, military, aerospace and
industrial applications.
For more products and information
please visit our web site at
www.austinsemiconductor.com
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1

AS3SSD4GB8PBG
AUSTIN SEMICONDUCTOSRO, ILNICD. STATE DISK
PRELIMINARY
Austin Semiconductor, Inc.
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
KEY FEATURES
NAND FLASH Controller
(2) stacks, each containing (2 or 4) NAND components
Each NAND component, either a 4,8 or 16Gb device, based on the use of single
silicon and stacked silicon solutions
Providing a total bit density of either 4,8 or 16GB
Controller contained in base interposer
Fast ATA host to buffer transfer rates supporting True IDE, PIO/4 mode support
512Byte Sector Buffers
Flash Memory power-down logic
ECC correction = 6 Bytes within a 512 Byte sector
Automatic Sleep Mode
Burst Transfer rate, 16.67MB per second
Sustained Transfer rate: 6.7MB per second
Sophisticated Wear Leveling
ARCHITECTURE
The PATA controller in the PATA Solid State Drive utilizes a 32-bit RISC architecture which provides for
direct connection of one, two or four NAND flash memory devices (2 per channel). An on-chip error
correction code (ECC) and cyclic redundancy check (CRC) unit generates the required code bytes
facilitating error detection and correction of up to six bytes per 512 byte data sector. On the fly code
byte generation for read and write operations minimizes ECC performance impacts.
www.DaTtahSeheceot4nUt.rcoolmler’s flash memory interface allows the direct connection of up to 10 chips and support
Samsung (NAND) type flash memory. ASI PATA Solid State Drives use single level cell (SLC) Samsung
NAND Flash Memory devices.
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2


Features AUSTIN SEMICONDUCTOR, INC. SOLID ST ATE DISK STA AS3SSD4GB8PBG AS3SSD8GB8PBG A S3SSD16GB5PBG PRELIMINARY Austin Semic onductor, Inc. Solid State Disk On Chip (SSDoC) FEATURES • Capacities - 4 GB - 8 GB - 16 GB • PATA Compatibility - ATA-5 compatible - UDMA4 supported - PIO Mode 4 supported - MWDMA Mode 2 sup ported • Performance - Sustained Sequ ential Read Bandwidth:16 MB/s - Sustain ed Sequential Write Bandwidth: 5 MB/s Form Factor - BGA Package • 31 mm (W) x 31 mm (L) x 4.2-7.8 mm (H) • We ighs approximately 11 grams (TYP) • E ach NAND component, either a 4, 8 or 16 Gb device, based on the use of single a nd stacked silicon solutions • ECC co rrection = 6 Bytes within a 512 Byte se ctor www.DataSheet4U.com • Automatic sleep mode • Controller contained in base interposer • SLC (Single-Level C ell) NAND Flash • Reliability - Mean Time Between Failure (MTBF) >2,000,000 Hours (est.) - Program/Erase >1,000,000 Times (est.) - Temp Cycle 500/1000 cycles, JEDEC A104 Condition B -55ºC to +125ºC • Po.
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