2SK3595-01MR MOSFET Datasheet

2SK3595-01MR Datasheet PDF, Equivalent


Part Number

2SK3595-01MR

Description

N-CHANNEL SILICON POWER MOSFET

Manufacture

Fuji Electric

Total Page 4 Pages
Datasheet
Download 2SK3595-01MR Datasheet


2SK3595-01MR
2SK3595-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-repetitive Avalanche current
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
VDS
VDSX *5
ID
ID(puls]
VGS
IAS *2
EAS *1
dVDS/dt *4
dV/dt *3
PD Ta=25°C
Tc=25°C
200
170
±45
±180
±30
45
258.9
20
5
2.16
95
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
Equivalent circuit schematic
Drain(D)
Gate(G)
Operating and storage
temperature range
Isolation voltage
Tch
Tstg
VISO *6
+150
-55 to +150
2
°C
°C
Source(S)
*1 L=205µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch <=150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS <= 200V *5 VGS=-30V *6 t=60sec f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
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Item
Symbol
Test Conditions
Drain-source breakdown voltaget
V(BR)DSS
ID= 250µA VGS=0V
Gate threshold voltage
VGS(th)
ID= 250µA VDS=VGS
Min. Typ.
200
3.0
Max. Units
V
5.0 V
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
IDSS
IGSS
RDS(on)
gfs
Ciss
VDS=200V VGS=0V
VDS=160V VGS=0V
VGS=±30V VDS=0V
ID=15A VGS=10V
ID=15A VDS=25V
VDS=75V
Tch=25°C
Tch=125°C
10
50
12.5 25
1960
25
250
100
66
2940
µA
nA
m
S
pF
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Coss
Crss
td(on)
tr
VGS=0V
f=1MHz
VCC=48V ID=15A
VGS=10V
260 390
18 27
20 30
17 26
ns
Turn-off time toff
td(off)
tf
RGS=10
53 80
19 29
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
QG
QGS
QGD
IAV
VSD
trr
Qrr
VCC=100V
ID=30A
VGS=10V
L=205µH Tch=25°C
IF=30A VGS=0V Tch=25°C
IF=30A VGS=0V
-di/dt=100A/µs Tch=25°C
51 76.5 nC
15 22.5
16 24
45 A
1.10 1.65 V
0.19 µs
1.4 µC
Thermalcharacteristics
Item
Thermal resistance
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Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
1.316 °C/W
58.0 °C/W
1

2SK3595-01MR
2SK3595-01MR
Characteristics
Allowable Power Dissipation
PD=f(Tc)
100
90
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125
Tc [°C]
150
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
120
20V
100
10V
8V
80 7.5V
60 7.0V
40
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20
0
02
6.5V
6.0V
VGS=5.5V
468
VDS [V]
10 12
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0.1
1 10
ID [A]
100
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=48V
800
700
I =18A
AS
600
I =27A
AS
500
I =45A
AS
400
300
200
100
0
0 25 50 75 100 125 150
starting Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.20
0.15
VGS= 6.0V
5.5V
6.5V
7.0V
7.5V
8V
0.10 10V
20V
0.05
0.00
0
20 40 60 80 100 120
ID [A]
2


Features 2SK3595-01MR FUJI POWER MOSFET 200304 S uper FAP-G Series Features High speed s witching Low on-resistance No secondary breadown Low driving power Avalanche-p roof N-CHANNEL SILICON POWER MOSFET Ou tline Drawings (mm) TO-220F Applicatio ns Switching regulators UPS (Uninterrup tible Power Supply) DC-DC converters M aximum ratings and characteristicAbsolu te maximum ratings (Tc=25°C unless oth erwise specified) Item Drain-source vol tage Continuous drain current Pulsed dr ain current Gate-source voltage Non-rep etitive Avalanche current Maximum Avala nche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power di ssipation Operating and storage tempera ture range Isolation voltage Symbol V D S VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25 C Tch Tstg VISO Ratings 200 170 ±45 180 ±30 45 258.9 20 5 2.16 95 +150 -5 5 to +150 2 Unit V V A A V A mJ kV/µs kV/µs W °C °C Equivalent circuit sc hematic Drain(D) Gate(G) Source(S) *6 *1 L=205µH, Vcc=48V,Tch=25°C, Se.
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