PowerTrench MOSFET. FDP3205 Datasheet

FDP3205 Datasheet PDF, Equivalent


Part Number

FDP3205

Description

N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDP3205 Datasheet PDF


FDP3205 Datasheet
May 2008
FDP3205
N-Channel PowerTrench® MOSFET
55V, 100A, 7.5mΩ
Features
• RDS(on) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A
• High performance trench technology for extermly low RDS(on)
• High power and current handing capability
• RoHS compliant
Description
• This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain superior switching performance.
D
GDS
TO-220
FDP Series
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
www.DataSheeSty4mU.bcoolm
Parameter
VDSS
VGSS
ID
IDM
EAS
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
- Pulsed
Single Pulsed Avalanche Energy
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
S
Ratings
55
±20
100
390
365
150
1.0
-55 to +175
Ratings
1.0
62.5
Units
V
V
A
A
mJ
W
W/oC
oC
Units
oC/W
©2008 Fairchild Semiconductor Corporation
FDP3205 Rev. A
1
www.fairchildsemi.com

FDP3205 Datasheet
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP3205
Device
FDP3205
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50units
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250μA, VGS = 0V, TJ = 25oC
VDS = 44V, VGS = 0V
VDS = 44V, TC = 150oC
VGS = ±20V, VDS = 0V
55
-
-
-
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
VGS = VDS, ID = 250μA
VGS = 10V, ID = 59A
VGS
TJ =
= 10V,
175oC
ID
=
59A
3.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
RG
Qg(tot)
Qg(th)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VGS = 0V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDS = 44V
ID = 59A
Ig = 1mA
-
-
-
3
-
-
-
-
Switching Characteristics
tON
td(on)
tr
www.DataSthde(oefft)4U.com
tf
tOFF
Turn-On Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
VDD = 28V, ID = 59A
VGS = 10V, RGEN = 2.5Ω
-
-
-
-
-
-
Drain-Source Diode Characteristics
VSD Drain to Source Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 59A
VGS = 0V, ISD = 59A
dIF/dt = 100A/μs
-
-
-
Notes:
1: Calculated continuous current based on maximum allowable junction temperature. Package limited to 75A continuous, see Figure 9.
2: L = 0.21mH, IAS = 59A, VDD = 50V, VGS = 10V, RG = 25Ω, Starting TJ = 25oC
Typ.
-
-
-
-
-
6.1
12
5810
460
230
4
93
25.5
35
9.5
32
170
23
147
42
18
60
-
43.3
70.8
Max. Units
-
25
250
±100
V
μA
nA
5.5 V
7.5
- mΩ
7730
610
345
5
120
33
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
nC
350 ns
56 ns
305 ns
94 ns
46 ns
130 ns
1.3 V
- ns
- nC
FDP3205 Rev. A
2 www.fairchildsemi.com


Features Datasheet pdf FDP3205 N-Channel PowerTrench® MOSFET May 2008 FDP3205 Features N-Channel P owerTrench® MOSFET 55V, 100A, 7.5mΩ D escription • This N-Channel MOSFET is produced using Fairchild Semiconductor ’s advanced PowerTrench process that has been especially tailored to minimiz e the on-state resistance and yet maint ain superior switching performance. RDS(on) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A • High performance trench te chnology for extermly low RDS(on) • H igh power and current handing capabilit y • RoHS compliant D G D S TO-220 FDP Series G S MOSFET Maximum Rating s TC = 25oC unless otherwise noted www. DataSheet4U.com Symbol VDSS VGSS ID IDM EAS PD TJ, TSTG Parameter Drain to Sou rce Voltage Gate to Source Voltage Drai n Current Drain Current Single Pulsed A valanche Energy Power Dissipation - Der ate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed (Note 2) (Note 1) Ratings 55 ±20 100 390 365 150 1.0 -55 to +175 Units V V A A mJ W W/oC oC Operating and Storage Temperature Range Th.
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