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CP283

Central Semiconductor

Power Transistor NPN - Silicon Power Transistor Chip


Description
PROCESS CP283 Power Transistor NPN - Silicon Power Transistor Chip Central TM Semiconductor Corp. PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization 68 x 68 MILS 9.5 MILS 18 x 11 MILS 18 x 12 MILS Al - 45,000Å Ti/Ni/Ag - (3000Å, 10,000Å, 10,000Å) GEOMETRY GROSS DIE PER 5 I...



Central Semiconductor

CP283

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