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APT35GA90B

Microsemi Corporation
Part Number APT35GA90B
Manufacturer Microsemi Corporation
Description High Speed PT IGBT
Published Jan 11, 2010
Detailed Description APT35GA90B APT35GA90S 900V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is...
Datasheet PDF File APT35GA90B PDF File

APT35GA90B
APT35GA90B

Overview
APT35GA90B APT35GA90S 900V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT.
Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes.
A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies.
Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive.
The intrinsic chip gate resistance and capacitance of the APT35GA90B poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.
® APT35GA90S D3PAK Single die IGBT FEATURES • Fast switching...


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